DATA SHEET
Product specification
Supersedes data of 1996 Sep 10
1999 May 21
DISCRETE SEMICONDUCTORS
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
book, halfpage
M3D088
1999 May 21
2
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
FEATURES
·
Small plastic SMD package
·
Switching speed: max. 50 ns
·
General application
·
Continuous reverse voltage:
max. 90 V
·
Repetitive peak reverse voltage:
max. 110 V
·
Repetitive peak forward current:
max. 600 mA
·
Repetitive peak reverse current:
max. 600 mA.
APPLICATIONS
·
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
General purpose switching diodes
fabricated in planar technology, and
encapsulated in small rectangular
plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two diodes in series.
The BAS35 has two diodes with a
common anode.
MARKING
TYPE NUMBER
MARKING
CODE
BAS29
L20
BAS31
L21
BAS35
L22
PINNING
PIN
DESCRIPTION
BAS29
BAS31
BAS35
1
anode
anode
cathode (k1)
2
not connected
cathode
cathode (k2)
3
cathode
common connection
common anode
Fig.1 Simplified outline (SOT23) and symbols.
handbook, halfpage
2
1
3
a. Simplified outline.
c. BAS31 diode.
b. BAS29 diode.
d. BAS35 diode.
MAM233
1
2
3
1
2
3
1
2
n.c.
3
1999 May 21
3
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
repetitive peak reverse voltage
-
110
V
V
R
continuous reverse voltage
-
90
V
I
F
continuous forward current
single diode loaded; see Fig.2;
note 1
-
250
mA
double diode loaded; see Fig.2;
note 1
-
150
mA
I
FRM
repetitive peak forward current
-
600
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
µ
s
-
10
A
t = 100
µ
s
-
4
A
t = 1 s
-
0.75
A
P
tot
total power dissipation
T
amb
= 25
°
C; note 1
-
250
mW
I
RRM
repetitive peak reverse current
-
600
mA
E
RRM
repetitive peak reverse energy
t
p
50
µ
s; f
20 Hz; T
j
= 25
°
C
-
5
mJ
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
1999 May 21
4
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 10 mA
-
750
mV
I
F
= 50 mA
-
840
mV
I
F
= 100 mA
-
900
mV
I
F
= 200 mA
-
1
V
I
F
= 400 mA
-
1.25
V
I
R
reverse current
see Fig.5
V
R
= 90 V
-
100
nA
V
R
= 90 V; T
j
= 150
°
C
-
100
µ
A
V
(BR)R
reverse avalanche breakdown
voltage
I
R
= 1 mA
120
170
V
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
35
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.7
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
360
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1999 May 21
5
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
BAS29; BAS31; BAS35
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0
100
(1)
(2)
200
300
200
0
100
MBG440
Tamb (
o
C)
IF
(mA)
Fig.3
Forward current as a function of
forward voltage.
handbook, halfpage
0
2
600
0
200
400
MBH280
1
IF
(mA)
VF (V)
(1)
(2)
(3)
(1) T
j
= 150
°
C; typical values.
(2) T
j
= 25
°
C; typical values.
(3) T
j
= 25
°
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
°
C prior to surge.
handbook, full pagewidth
MBH327
10
tp (
µ
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
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