1999 May 26
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
FEATURES
·
Plastic SMD package
·
Low leakage current: typ. 3 pA
·
Switching time: typ. 0.8
µ
s
·
Continuous reverse voltage:
max. 75 V
·
Repetitive peak reverse voltage:
max. 85 V
·
Repetitive peak forward current:
max. 500 mA.
APPLICATION
·
Low leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial medium-speed switching
diode with a low leakage current in a
small SOT23 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
2
1
3
Top view
MAM106
2
n.c.
1
3
Marking code: JVp = made in Hong Kong; JVt = made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
see Fig.2; note 1
-
215
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25
°
C prior to surge;
see Fig.4
t
p
= 1
µ
s
-
4
A
t
p
= 1 ms
-
1
A
t
p
= 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
°
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
1999 May 26
3
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 1 mA
-
0.9
V
I
F
= 10 mA
-
1
V
I
F
= 50 mA
-
1.1
V
I
F
= 150 mA
-
1.25
V
I
R
reverse current
see Fig.5
V
R
= 75 V
0.003
5
nA
V
R
= 75 V; T
j
= 150
°
C
3
80
nA
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
2
-
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
0.8
3
µ
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
330
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1999 May 26
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
GRAPHICAL DATA
Device mounted on a FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
handbook, halfpage
0
200
300
0
100
200
MLB755
100
T ( C)
amb
o
I F
(mA)
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1.6
300
0
100
200
MLB752 - 1
0.8
1.2
0.4
I F
(mA)
V (V)
F
(1)
(2)
(3)
(1) T
j
= 150
°
C; typical values.
(2) T
j
= 25
°
C; typical values.
(3) T
j
= 25
°
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents; T
j
= 25
°
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
µ
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1999 May 26
5
Philips Semiconductors
Product specification
Low-leakage diode
BAS116
V
R
= 75 V.
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
10
2
10
3
150
200
50
0
MLB754
100
10
1
10
1
10
2
I R
(nA)
T ( C)
o
j
(1)
(2)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
0
10
20
15
5
2
0
1
MBG526
VR (V)
Cd
(pF)
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery time test circuit and waveforms.
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