112
GaAlAs Infrared Emitting Diodes
TO-46 Lensed Package -- 880 nm
VTE1163
PACKAGE DIMENSIONS
inch (mm)
CASE 24
TO-46 HERMETIC (Lensed)
CHIP SIZE: .018" x .018"
DESCRIPTION
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip
suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
-55°C to 125°C
Continuous Power Dissipation:
200 mW
Derate above 30°C:
2.11 mW/°C
Maximum Continuous Current:
100 mA
Derate above 30°C:
1.05 mA/°C
Peak Forward Current, 10 µs, 100 pps:
3A
Temp. Coefficient of Power Output (Typ.):
-.8%/°C
Maximum Reverse Voltage:
5.0V
Maximum Reverse Current @ V
R
= 5V:
10 µA
Peak Wavelength (Typical):
880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.):
35 pF
Response Time @ I
F
= 20 mA
Rise: 1.0 µs
Fall: 1.0 µs
Lead Soldering Temperature:
260°C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1163
22
28
36
6.4
285
110
1.0
2.8
3.5
±10°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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