73
Alternate Source/
Second Source Photodiodes
VTD34
(BPW34 INDUSTRY EQUIVALENT)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded
plastic package. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. These photodiodes are
designed to provide excellent sensitivity at low levels
of irradiance.
PACKAGE DIMENSIONS
inch (mm)
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-20°C to 80°C
Operating Temperature:
-20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTD34
UNITS
Min.
Typ.
Max.
I
SC
Short Circuit Current
1000 Lux, 2850 K
50
70
µA
TC I
SC
I
SC
Temperature Coefficient
2850 K
.20
%/°C
V
OC
Open Circuit Voltage
H = 1000 Lux, 2850 K
300
365
mV
TC V
OC
V
OC
Temperature Coefficient
2850 K
-2.0
mV/°C
I
D
Dark Current
H = 0, V
R
= 10 V
2
30
nA
C
J
Junction Capacitance
@ 1 MHz, V
R
= 0 V
60
pF
t
R
/t
F
Rise/Fall Time @ 1 k
Lead
VR = 10 V, 833 nm
50
nsec
S
R
Sensitivity
@ Peak
0.60
A/W
range
Spectral Application Range
400
1100
nm
p
Spectral Response - Peak
900
nm
V
BR
Breakdown Voltage
40
V
1/2
Angular Resp.-50% Resp. Pt.
±50
Degrees
NEP
Noise Equivalent Power
4.8 x 10
-14
D*
Specific Detectivity
5.7 x 10
12
/ W
W
Hz
/
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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