25
VTB Process Photodiodes
VTB1012B, 1013B
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a "flat"
window, dual lead TO-46 package. The package
incorporates an infrared rejection filter. Cathode
is common to the case. These diodes have very
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS
inch (mm)
CASE 17 TO-46 HERMETIC
CHIP ACTIVE AREA: .0025 in
2
(1.60 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
-40°C to 110°C
Operating Temperature:
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTB1012B
VTB1013B
UNITS
Min.
Typ.
Max.
Min.
Typ.
Max.
I
SC
Short Circuit Current
H = 100 fc, 2850 K
0.8
1.3
0.8
1.3
µA
TC I
SC
I
SC
Temperature Coefficient
2850 K
.02
.08
.02
.08
%/°C
V
OC
Open Circuit Voltage
H = 100 fc, 2850 K
420
420
mV
TC V
OC
V
OC
Temperature Coefficient
2850 K
-2.0
-2.0
mV/°C
I
D
Dark Current
H = 0, VR = 2.0 V
100
20
pA
R
SH
Shunt Resistance
H = 0, V = 10 mV
.25
7.0
G
TC R
SH
R
SH
Temperature Coefficient
H = 0, V = 10 mV
-8.0
-8.0
%/°C
C
J
Junction Capacitance
H = 0, V = 0
.31
.31
nF
range
Spectral Application Range
330
720
330
720
nm
p
Spectral Response - Peak
580
580
nm
V
BR
Breakdown Voltage
2
40
2
40
V
1/2
Angular Resp. - 50% Resp. Pt.
±35
±35
Degrees
NEP
Noise Equivalent Power
5.3 x 10
-14
(Typ.)
1.1 x 10
-14
(Typ.)
D*
Specific Detectivity
2.4 x 10
12
(Typ.)
1.2 x 10
13
(Typ.)
/ W
W
Hz
/
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
PDF 
ZIP