Composite Transistors
1
Publication date: June 2003
SJJ00241BED
XN04321
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
Features
· Two elements incorporated into one package
(Transistors with built-in resistor)
· Reduction of the mounting area and assembly cost by one half
Basic Part Number
· UNR2221 + UNR2121
Absolute Maximum Ratings T
a
= 25°C
Marking Symbol: EB
Internal Connection
Unit: mm
2.90
1.9
±0.1
0.16
+0.10
0.06
2.8
+0.2 0.3
1.1
+0.3 0.1
1.1
0 to 0.1
+0.2 0.1
1.50
(0.65)
0.4
±
0.2
+0.25 0.05
(0.95)
0.30
+0.10
0.05
0.50
+0.10
0.05
(0.95)
6
5
4
1
3
2
+0.20
0.05
5
°
10
°
6
Tr2
Tr1
5
4
3
1
2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
1
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 6 V, I
C
= 0
5
mA
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 100 mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 5 mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 500
4.9
V
Output voltage low level
V
OL
V
CC
= 5 V, V
B
= 3.5 V, R
L
= 500
0.2
V
Input resistance
R
1
-30%
2.2
+30%
k
Resistance ratio
R
1
/ R
2
0.8
1.0
1.2
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Electrical Characteristics T
a
= 25°C ± 3°C
· Tr1
1: Collector (Tr1)
4: Collector (Tr2)
2: Base (Tr2)
5: Base (Tr1)
3: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Parameter
Symbol
Rating
Unit
Tr1
Collector-base voltage
V
CBO
50
V
(Emitter open)
Collector-emitter voltage
V
CEO
50
V
(Base open)
Collector current
I
C
500
mA
Tr2
Collector-base voltage
V
CBO
-50
V
(Emitter open)
Collector-emitter voltage
V
CEO
-50
V
(Base open)
Collector current
I
C
-500
mA
Overall
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55 to +150
°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
XN04321
2
SJJ00241BED
Common characteristics chart
P
T
T
a
Characteristics charts of Tr1
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Electrical Characteristics (continued) T
a
= 25°C ± 3°C
· Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 µA, I
E
= 0
-50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -50 V, I
E
= 0
-1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -50 V, I
B
= 0
-1
µA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -6 V, I
C
= 0
-5
mA
Forward current transfer ratio
h
FE
V
CE
= -10 V, I
C
= -100 mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -100 mA, I
B
= -5 mA
- 0.25
V
Output voltage high level
V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 500
-4.9
V
Output voltage low level
V
OL
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 500
- 0.2
V
Input resistance
R
1
-30%
2.2
+30%
k
Resistance ratio
R
1
/ R
2
0.8
1.0
1.2
Transition frequency
f
T
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
0
20
60
100
160
140
40
120
80
Ambient temperature
T
a
(
°C)
Total power dissipation
P
T
(mW)
0
500
300
100
200
400
0
3
4
5
6
7
8
1
2
9
0
30
25
20
15
10
5
I
B
= 400 µA
T
a
= 25°C
380 µA
360 µA
340 µA
320 µA
300 µA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
1
10
100
0.01
1
0.1
I
C
/ I
B
= 10
T
a
= 85°C
-25°C
25
°C
Collector current I
C
(mA)
Collector-emitter saturation voltage V
CE(sat)
(V)
1
10
100
1 000
0
200
160
120
80
40
V
CE
= 10 V
T
a
= 85°C
-25°C
25
°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
XN04321
3
SJJ00241BED
Characteristics charts of Tr2
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
15
20
25
30
35
5
10
40
1
100
10
f
= 1 MHz
T
a
= 25°C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
0
2.5
2.0
0.5
1.5
1.0
0.1
100
10
1
V
O
= 5 V
T
a
= 25°C
Input voltage V
IN
(V)
Output current I
O
(mA)
0.1
1
10
100
0.1
10
1
V
O
= 0.2 V
T
a
= 25°C
Output current I
O
(mA)
Input voltage V
IN
(V)
0
-12
-10
-8
-2
-6
-4
0
-120
-100
-80
-60
-40
-20
I
B
= -1.0 mA
- 0.5 mA
- 0.6 mA
- 0.7 mA
- 0.8 mA
- 0.9 mA
- 0.4 mA
T
a
= 25°C
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
-1
-10
-100
-1 000
- 0.01
-1
- 0.1
T
a
= 85°C
-25°C
25
°C
I
C
/ I
B
= 10
Collector current I
C
(mA)
Collector-emitter saturation voltage V
CE(sat)
(V)
-1
-10
-100
-1 000
0
140
120
40
100
80
20
60
V
CE
= -10 V
T
a
= 85°C
-25°C
25
°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0
-40
-10
-30
-20
1
100
10
f
= 1 MHz
T
a
= 25°C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
0
-2.5
-2.0
- 0.5
-1.5
-1.0
- 0.1
-100
-10
-1
V
O
= -5 V
T
a
= 25°C
O
IN
Input voltage V
IN
(V)
Output current I
O
(mA)
- 0.1
-1
-10
-100
-1 000
-1
-10
V
O
= - 0.2 V
T
a
= 25°C
Output current I
O
(mA)
Input voltage V
IN
(V)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
· Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
· Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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