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Part Number UNR2110

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Transistors with built-in Resistor
1
Publication date: December 2003
SJH00006CED
UNR211x Series
(UN211x Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
· Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
· Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
Marking Symbol (R
1
)
(R
2
)
· UNR2110 (UN2110)
6L
47 k
· UNR2111 (UN2111)
6A
10 k
10 k
· UNR2112 (UN2112)
6B
22 k
22 k
· UNR2113 (UN2113)
6C
47 k
47 k
· UNR2114 (UN2114)
6D
10 k
47 k
· UNR2115 (UN2115)
6E
10 k
· UNR2116 (UN2116)
6F
4.7 k
· UNR2117 (UN2117)
6H
22 k
· UNR2118 (UN2118)
6I
0.51 k
5.1 k
· UNR2119 (UN2119)
6K
1 k
10 k
· UNR211D (UN211D)
6M
47 k
10 k
· UNR211E (UN211E)
6N
47 k
22 k
· UNR211F (UN211F)
6O
4.7 k
10 k
· UNR211H (UN211H)
6P
2.2 k
10 k
· UNR211L (UN211L)
6Q
4.7 k
4.7 k
· UNR211M (UN211M)
EI
2.2 k
47 k
· UNR211N (UN211N)
EW
4.7 k
47 k
· UNR211T (UN211T)
EY
22 k
47 k
· UNR211V (UN211V)
FC
2.2 k
2.2 k
· UNR211Z (UN211Z)
FE
4.7 k
22 k
Absolute Maximum Ratings T
a
= 25°C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
­0.05
(0.65)
1.50
+0.25 ­0.05
2.8
+0.2 ­0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
­0.05
0.16
+0.10
­0.06
0.4
±
0.2
5°
10°
0 to 0.1
1.1
+0.2 ­0.1
1.1
+0.3 ­0.1
Note) The part numbers in the parenthesis show conventional part number.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-50
V
Collector-emitter voltage (Base open)
V
CEO
-50
V
Collector current
I
C
-100
mA
Total power dissipation
P
T
200
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55 to +150
°C
UNR211x Series
2
SJH00006CED
Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 µA, I
E
= 0
-50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -50 V, I
E
= 0
- 0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -50 V, I
B
= 0
- 0.5
µA
Emitter-base
UNR2110/2115/2116/2117
I
EBO
V
EB
= -6 V, I
C
= 0
- 0.01
mA
cutoff current UNR2113
- 0.1
(Collector open) UNR2112/2114/211D/
- 0.2
211E/211M/211N/211T
UNR211Z
- 0.4
UNR2111
- 0.5
UNR211F/211H
-1.0
UNR2119
-1.5
UNR2118/211L/211V
-2.0
Forward current
UNR211V
h
FE
V
CE
= -10 V, I
C
= -5 mA
6
20
transfer ratio
UNR2118/211L
20
UNR2119/211D/211F/211H
30
UNR2111
35
UNUNR2112/211E
60
UNR211Z
60
200
UNR2113/2114/211M
80
UNR211N/211T
80
400
UNR2110
*
/2115
*
/2116
*
/2117
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= - 0.3 mA
- 0.25
V
UNR211V
I
C
= -10 mA, I
B
= -1.5 mA
Output voltage high-level
V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 1 k
-4.9
V
Output voltage low-level
V
OL
V
CC
= -5 V, V
B
= -2.5 V, R
L
= 1 k
- 0.2
V
UNR2113
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 1 k
UNR211D
V
CC
= -5 V, V
B
= -10 V, R
L
= 1 k
UNR211E
V
CC
= -5 V, V
B
= -6 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
UNR2114/2119/211E
V
CB
= -10 V, I
E
= 2 mA, f = 200 MHz
150
211F/211H
Input resistance
UNR2118
R
1
-30%
0.51
+30%
k
UNR2119
1.0
UNR211H/211M/211V
2.2
UNR2116/211F/211L/211N/211Z
4.7
UNR2111/2114/2115
10
UNR2112/2117/211T
22
UNR2110/2113/211D/211E
47
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
UNR211x Series
3
SJH00006CED
Electrical Characteristics (continued) T
a
= 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance ratio UNR211M
R
1
/R
2
0.047
UNR211N
0.1
UNR2118/2119
0.08
0.10
0.12
UNR211Z
0.21
UNR2114
0.17
0.21
0.25
UNR211H
0.17
0.22
0.27
UNR211T
0.47
UNR211F
0.37
0.47
0.57
UNR211V
1.0
UNR2111/2112/2113/211L
0.8
1.0
1.2
UNR211E
1.70
2.14
2.60
UNR211D
3.7
4.7
5.7
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25°C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
-0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25
°C
-25°C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= ­10 V
T
a
= 75°C
25
°C
-25°C
Characteristics charts of UNR2110
0
50
100
150
200
250
0
40
80
120
160
Ambient temperature T
a
(
°C)
Total power dissipation P
T
(mW)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
UNR211x Series
4
SJH00006CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR2111
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25°C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(µ
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25°C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
°C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25°C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25
°C
-25°C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75°C
25
°C
-25°C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25°C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(µ
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25°C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25°C
UNR211x Series
5
SJH00006CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR2112
Characteristics charts of UNR2113
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25°C
I
B
= -1.0 mA
- 0.9mA
- 0.8mA
- 0.7mA
- 0.6mA
- 0.5mA
- 0.4mA
- 0.3mA
- 0.2mA
- 0.1mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75
°C
25
°C
-25°C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75
°C
25
°C
-25°C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25°C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(µA
)
Input voltage V
IN
(V)
V
O
=
-5 V
T
a
= 25
°C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
°C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25°C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25
°C
-25°C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75°C
25
°C
-25°C