1
Transistors with built-in Resistor
UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L
(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/
111D/111E/111F/111H/111L)
Silicon PNP epitaxial planar transistor
For digital circuits
s
Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Resistance by Part Number
(R
1
)
(R
2
)
q
UNR1111
10k
10k
q
UNR1112
22k
22k
q
UNR1113
47k
47k
q
UNR1114
10k
47k
q
UNR1115
10k
--
q
UNR1116
4.7k
--
q
UNR1117
22k
--
q
UNR1118
0.51k
5.1k
q
UNR1119
1k
10k
q
UNR1110
47k
--
q
UNR111D
47k
10k
q
UNR111E
47k
22k
q
UNR111F
4.7k
10k
q
UNR111H
2.2k
10k
q
UNR111L
4.7k
4.7k
s
Absolute Maximum Ratings
(Ta=25°C)
1:Base
2:Collector
3:Emitter
M-A1 Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
400
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
55 to +150
°C
6.9
±
0.1
2.5
±
0.1
(1.0)
(1.0)
(1.5)
(0.85)
0.45
±
0.05
0.55
±
0.1
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
B
C
R1
R2
E
Note) The part numbers in the parenthesis show conventional part number.
2
Transistors with built-in Resistor
I
Electrical Characteristics
(Ta=25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
µA
I
CEO
V
CE
= 50V, I
B
= 0
0.5
µA
UNR1111
0.5
UNR1112/1114/111E/111D
0.2
UNR1113
0.1
UNR1115/1116/1117/1110
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UNR111F/111H
1.0
UNR1119
1.5
UNR1118/111L
2.0
Collector to base voltage
V
CBO
I
C
= 10
µA, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UNR1111
35
UNR1112/111E
60
UNR1113/1114
h
FE
V
CE
= 10V, I
C
= 5mA
80
UNR1115*/1116*/1117*/1110*
160
460
UNR111F/111D/1119/111H
30
UNR1118/111L
20
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
UNR1113
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
0.2
V
UNR111D
V
CC
= 5V, V
B
= 10V, R
L
= 1k
0.2
UNR111E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= 2mA, f = 200MHz
80
MHz
UNR1111/1114/1115
10
UNR1112/1117
22
UNR1113/1110/111D/111E
47
UNR1116/111F/111L
R
1
(30%)
4.7
(+30%)
k
UNR1118
0.51
UNR1119
1
UNR111H
2.2
UNR1111/1112/1113/111L
0.8
1.0
1.2
UNR1114
0.17
0.21
0.25
UNR1118/1119
0.08
0.1
0.12
UNR111D
R
1
/R
2
4.7
UNR111E
2.14
UNR111F
0.47
UNR111H
0.17
0.22
0.27
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
* h
FE
rank classification (UNR1115/1116/1117/1110)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
3
Transistors with built-in Resistor
Common characteristics chart
P
T
-- Ta
Characteristics charts of UNR1111
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
0
100
200
300
400
500
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (°C)
Total power dissipation P
T
(mW
)
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
4
Transistors with built-in Resistor
Characteristics charts of UNR1112
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1113
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
5
Transistors with built-in Resistor
UNR1111/1112/1113/1114/1115/1116/1117/1118/
1119/1110/111D/111E/111F/111H/111L
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1114
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.1
0.3
0.1 0.3
1
3
10
30
100
300
1000
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
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