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Part Number UNR521x

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Transistors with built-in Resistor
1
Publication date: January 2004
SJH00024CED
UNR521x Series
(UN521x Series)
Silicon NPN epitaxial planar type
For digital circuits
Features
· Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
· S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
Resistance by Part Number
Marking symbol (R
1
)
(R
2
)
· UNR5210 (UN5210)
8L
47 k
· UNR5211 (UN5211)
8A
10 k
10 k
· UNR5212 (UN5212)
8B
22 k
22 k
· UNR5213 (UN5213)
8C
47 k
47 k
· UNR5214 (UN5214)
8D
10 k
47 k
· UNR5215 (UN5215)
8E
10 k
· UNR5216 (UN5216)
8F
4.7 k
· UNR5217 (UN5117)
8H
22 k
· UNR5218 (UN5218)
8I
0.51 k
5.1 k
· UNR5219 (UN5219)
8K
1 k
10 k
· UNR521D (UN521D)
8M
47 k
10 k
· UNR521E (UN521E)
8N
47 k
22 k
· UNR521F (UN521F)
8O
4.7 k
10 k
· UNR521K (UN521K)
8P
10 k
4.7 k
· UNR521L (UN521L)
8Q
4.7 k
4.7 k
· UNR521M (UN521M)
EL
2.2 k
47 k
· UNR521N (UN521N)
EX
4.7 k
47 k
· UNR521T (UN521T)
EZ
22 k
47 k
· UNR521V (UN521V)
FD
2.2 k
2.2 k
· UNR521Z (UN521Z)
FF
4.7 k
22 k
Absolute Maximum Ratings T
a
= 25°C
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
B
R
1
R
2
C
E
2.1
±
0.1
1.3
±0.1
0.3
+0.1
­0.0
2.0
±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 ­0.1
0.15
+0.10
­0.05
5°
10°
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55 to +150
°C
UNR521x Series
2
SJH00024CED
Electrical Characteristics T
a
= 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
Emitter-base UNR5210/5215/5216/5217
I
EBO
V
EB
= 6 V, I
C
= 0
0.01
mA
cutoff current UNR5213
0.1
(Collector
UNR5212/5214/521D/
0.2
open)
521E/521M/521N/521T
UNR521Z
0.4
UNR5211
0.5
UNR521F/521K
1.0
UNR5219
1.5
UNR5218/521L/521V
2.0
Forward
UNR521V
h
FE
V
CE
= 10 V, I
C
= 5 mA
6
20
current
UNR5218/521K/521L
20
transfer
UNR5219/521D/521F
30
ratio
UNR5211
35
UNR5212/521E
60
UNR521Z
60
200
UNR5213/5214/521M
80
UNR521N/521T
80
400
UNR5210
*
/5215
*
/5216
*
/5217
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 0.3 mA
0.25
V
UNR521V
I
C
= 10 mA, I
B
= 1.5 mA
Output voltage high-level
V
OH
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 k
4.9
V
Output voltage low-level
V
OL
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 k
0.2
V
UNR5213/521K
V
CC
= 5 V, V
B
= 3.5 V, R
L
= 1 k
UNR521D
V
CC
= 5 V, V
B
= 10 V, R
L
= 1 k
UNR521E
V
CC
= 5 V, V
B
= 6.0 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
150
MHz
Input
UNR5218
R
1
-30%
0.51
+30%
k
resistance UNR5219
1.0
UNR521M/521V
2.2
UNR5216/521F/521L/521N
4.7
UNR521Z
UNR5211/5214/5215/521K
10
UNR5212/5217/521T
22
UNR5210/5213/521D/521E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
UNR521x Series
3
SJH00024CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance UNR521M
R
1
/R
2
0.047
ratio
UNR521N
0.1
UNR5218/5219
0.08
0.10
0.12
UNR521Z
0.21
UNR5214
0.17
0.21
0.25
UNR521T
0.47
UNR521F
0.37
0.47
0.57
UNR521V
1.0
UNR5211/5212/5213/521L
0.8
1.0
1.2
UNR521K
1.70
2.13
2.60
UNR521E
1.70
2.14
2.60
UNR521D
3.7
4.7
5.7
Electrical Characteristics (continued) T
a
= 25°C ± 3°C
Characteristics charts of UNR5210
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25°C
I
B
= 1.0 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25
°C
-25°C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75°C
25
°C
-25°C
0
0
160
40
120
80
240
200
160
120
80
40
Ambient temperature T
a
(
°C)
Total power dissipation P
T
(mW
)
UNR521x Series
4
SJH00024CED
Characteristics charts of UNR5211
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
10
-
1
6
5
4
3
2
1
1
10
10
2
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25°C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25°C
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25°C
0
0
12
2
10
4
8
6
40
120
80
160
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25°C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25
°C
-25°C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75°C
25
°C
-25°C
0
10
-
1
6
5
4
3
2
1
10
10
2
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25°C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25°C
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25°C
UNR521x Series
5
SJH00024CED
Characteristics charts of UNR5212
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR5213
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
0
12
2
10
4
8
6
40
120
80
160
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25°C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.9 mA
0.8 mA
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25
°C
-25°C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75°C
25
°C
-25°C
0
10
-
1
6
5
4
3
2
1
1
10
10
2
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25°C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25°C
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25°C
0
0
12
2
10
4
8
6
40
120
80
160
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25°C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75°C
25
°C
-25°C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75°C
25
°C
-25°C