1
Transistors with built-in Resistor
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
Silicon PNP epitaxial planer transistor
For digital circuits
s
Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
New S type package, allowing supply with the radial taping.
s
Resistance by Part Number
(R
1
)
(R
2
)
q
UN4111
10k
10k
q
UN4112
22k
22k
q
UN4113
47k
47k
q
UN4114
10k
47k
q
UN4115
10k
--
q
UN4116
4.7k
--
q
UN4117
22k
--
q
UN4118
0.51k
5.1k
q
UN4119
1k
10k
q
UN4110
47k
--
q
UN411D
47k
10k
q
UN411E
47k
22k
q
UN411F
4.7k
10k
q
UN411H
2.2k
10k
q
UN411L
4.7k
4.7k
s
Absolute Maximum Ratings
(Ta=25°C)
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
55 to +150
°C
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3.0
±
0.2
15.6
±
0.5
2.0
±
0.2
0.7
±
0.1
0.45
0.1
1
2
3
+0.2
B
C
R1
R2
E
2
Transistors with built-in Resistor
s
Electrical Characteristics
(Ta=25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
µ
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
µ
A
UN4111
0.5
UN4112/4114/411E/411D
0.2
UN4113
0.1
UN4115/4116/4117/4110
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UN411F/411H
1.0
UN4119
1.5
UN4118/411L
2.0
Collector to base voltage
V
CBO
I
C
= 10
µ
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UN4111
35
UN4112/411E
60
UN4113/4114
h
FE
V
CE
= 10V, I
C
= 5mA
80
UN4115*/4116*/4117*/4110*
160
460
UN411F/411D/4119/411H
30
UN4118/411L
20
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
UN4113
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
0.2
V
UN411D
V
CC
= 5V, V
B
= 10V, R
L
= 1k
0.2
UN411E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
80
MHz
UN4111/4114/4115
10
UN4112/4117
22
UN4113/4110/411D/411E
47
UN4116/411F/411L
R
1
(30%)
4.7
(+30%)
k
UN4118
0.51
UN4119
1
UN411H
2.2
UN4111/4112/4113/411L
0.8
1.0
1.2
UN4114
0.17
0.21
0.25
UN4118/4119
0.08
0.1
0.12
UN411D
R
1
/R
2
3.7
4.7
5.7
UN411E
1.7
2.14
2.6
UN411F
0.37
0.47
0.57
UN411H
0.17
0.22
0.27
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
* h
FE
rank classification (UN4115/4116/4117/4110)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
3
Transistors with built-in Resistor
0
0
160
20
60
100
140
40
120
80
100
300
200
400
Ambient temperature Ta (°C)
Total power dissipation P
T
(mW
)
Common characteristics chart
P
T
-- Ta
Characteristics charts of UN4111
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
4
Transistors with built-in Resistor
Characteristics charts of UN4112
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN4113
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
5
Transistors with built-in Resistor
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN4114
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25°C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75°C
25°C
25°C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75°C
25°C
25°C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25°C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25°C
0.1
0.3
0.1 0.3
1
3
10
30
100
300
1000
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25°C
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