1
Schottky Barrier Diodes (SBD)
MA2ZD14
Silicon epitaxial planar type
For high-speed switching circuits
I Features
· S-mini type 2-pin package
· Low forward rise voltage V
F
(V
F
< 0.4 V)
I Absolute Maximum Ratings T
a
= 25°C
Unit : mm
Marking Symbol: 2N
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
20
V
Repetitive peak reverse voltage
V
RRM
20
V
Average forward current
I
F(AV)
100
mA
Peak forward current
I
FM
300
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
125
°C
Storage temperature
T
stg
-55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 10 V
20
µA
Forward voltage (DC)
V
F1
I
F
= 5 mA
0.27
V
V
F2
I
F
= 100 mA
0.40
V
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
25
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
3.0
ns
I
rr
= 10 mA, R
L
= 100
I Electrical Characteristics T
a
= 25°C ± 3°C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
W.F.Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Internal Connection
1
2
K
A
0.625
0.3
1.25
±
0.1
0.5
±
0.1
0.7
±
0.1
2.5
± 0.2
1.7
± 0.1
0.4
± 0.1
0.4
± 0.1
0.16
+
0.1
-
0.06
2
1
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : t
rr
measuring instrument
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