1
Transmissive Photosensors (Photo Interrupters)
CNA1311K
Photo Interrupter
For contactless SW, object detection
Overview
CNA1311K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting diode
chip and a high sensitivity Si phototransistor chip are integrated in a
double molded resin package.
*1
Input power derating ratio is
1.0mW/°C at Ta
25°C.
*2
Output power derating ratio is
1.0mW/°C at Ta
25°C.
*3
Soldering time is within 5 seconds.
,,
,
(1.8)
1
3
2
4
4.0
1.5
1.0
1.5
*3.0
2.3
3.3
5.0 min.
+0.2
0.1
2-0.2
(0.9)
A'
A
(1.5)
A side
With gate
A Side or B Side
B side
(0.15)
2.6
*2.0
2-0.4
Not soldered
1.0 max.
1.5
(0.45)
SEC. A-A'
Slit width
(0.15)
2-0.5
Optical
center
(C0.5)
1
3
2
4
Unit : mm
3: Collecter
4: Emitter
1: Anode
2: Cathode
Pin connection
(Note)
1. Tolerance unless otherwise specified is
±
0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
,,
,,,
,,
more than 1mm
Soldering bath
,,
,
,
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
6
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector current
I
C
20
mA
Output (Photo Collector to emitter voltage
V
CEO
35
V
transistor)
Emitter to collector voltage
V
ECO
6
V
Collector power dissipation
P
C
*2
75
mW
Operating ambient temperature
T
opr
25 to +85
°C
Temperature
Storage temperature
T
stg
40 to +100
°C
Soldering temperature
T
sol
*3
260
°C
Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 20mA
1.2
1.4
V
characteristics Reverse current (DC)
I
R
V
R
= 3V
10
µ
A
Output characteristics Collector cutoff current
I
CEO
V
CE
= 20V
100
nA
Transfer
Collector current
I
C
V
CE
= 5V, I
F
= 5mA
50
600
µ
A
characteristics
Collector to emitter saturation voltage V
CE(sat)
I
F
= 10mA, I
C
= 40
µ
A
0.4
V
Response time
t
r
, t
f
*
V
CC
= 5V, I
C
= 0.1mA, R
L
= 1000
50
µ
s
*
Switching time measurement circuit
Features
Ultraminiature : 2.6
×
4.0 mm (height : 3.3 mm)
Highly precise position detection : 0.05 mm
Gap width : 1.0 mm
2
CNA1311K
Transmissive Photosensors (Photo Interrupters)
I
F
, I
C
-- Ta
Forward current, collector current I
F
, I
C
(mA)
I
C
-- Ta
120
80
60
40
20
100
Ambient temperature Ta (°C )
Relative output current I
C
(%)
0
V
CE
= 5V
I
F
= 5mA
I
C
-- V
CE
3
1
2
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
1
2
3
4
6
5
0
0
Ta = 25°C
I
C
-- I
F
5
3
2
1
4
Forward current I
F
(mA)
Collector current I
C
(mA)
5
10
15
20
25
0
0
V
CE
= 5V
Ta = 25°C
I
CEO
-- Ta
1
10
3
10
1
10
4
10
2
Ambient temperature Ta (°C )
V
CE
= 20V
Dark current I
CEO
(
µ
A)
10
5
V
F
-- Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (°C )
Forward voltage V
F
(V)
0
20
40
60
80
100
0
40 20
0
20
40
60
80
100
40 20
0
20
40
60
80
100
40 20
60
50
40
30
20
10
Ambient temperature Ta (°C )
0
20
40
60
80
100
0
25
1
10
10
1
t
r
-- I
C
10
1
Collector current I
C
(mA)
Rise time t
r
(
µ
s)
10
1
10
2
10
3
10
2
V
CC
= 5V
10
1
t
f
-- I
C
Collector current I
C
(mA)
Fall time t
f
(
µ
s)
10
1
1
10
10
2
10
2
10
1
10
3
V
CC
= 5V
I
F
-- V
F
60
30
20
10
50
40
Forward voltage V
F
(V)
Forward current I
F
(mA)
0.4
0.8
1.2
1.6
2.4
2.0
0
0
Ta = 25°C
10mA
1mA
I
F
= 50mA
I
F
I
C
I
F
= 20mA
10mA
15mA
5mA
2mA
100
R
L
= 2k
1k
100
R
L
= 2k
1k
10%
90%
t
d
t
r
t
f
R
L
V
CC
Sig.
OUT
Sig.
OUT
50
Sig.IN
,,
,
10%
90%
t
d
t
r
t
f
R
L
V
CC
Sig.
OUT
Sig.
OUT
50
Sig.IN
,
,
,
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