1
Transistor
2SB709A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD601A
s
Features
q
High foward current transfer ratio h
FE
.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25°C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO236
2:Emitter
EIAJ:SC59
3:Collector
Mini Type Package
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0.95
0.95
1.9
±
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
±
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
45
45
7
200
100
200
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
°C
°C
s
Electrical Characteristics
(Ta=25°C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
µ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
µ
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
45
45
7
160
typ
0.3
80
2.7
max
0.1
100
460
0.5
Unit
µ
A
µ
A
V
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
BQ
BR
BS
2
Transistor
2SB709A
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (°C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25°C
250
µ
A
200
µ
A
150
µ
A
100
µ
A
50
µ
A
I
B
=300
µ
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
450
150
300
0
60
50
40
30
20
10
V
CE
=5V
Ta=25°C
Base current I
B
(
µ
A)
Collector current I
C
(mA
)
0
1.8
0.6
1.2
0
400
300
100
250
350
200
50
150
V
CE
=5V
Ta=25°C
Base to emitter voltage V
BE
(V)
Base current I
B
(
µ
A
)
0
2.0
1.6
0.4
1.2
0.8
0
240
200
160
120
80
40
V
CE
=5V
Ta=75°C
25°C
25°C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0
600
500
400
300
200
100
V
CE
=10V
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
160
120
40
100
140
80
20
60
V
CB
=10V
Ta=25°C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
8
6
2
5
7
4
1
3
I
E
=0
f=1MHz
Ta=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
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