1
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
Allowing supply with the radial taping
s
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
8
4
15
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD2242
2SD2242A
2SD2242
2SD2242A
T
C
=25
°
C
Ta=25
°
C
s
Electrical Characteristics
(T
C
=25°C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= 12mA,
V
CC
= 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
200
200
500
500
2
10000
2.5
2
4
Unit
µ
A
µ
A
mA
V
V
V
MHz
µ
s
µ
s
µ
s
2SD2242
2SD2242A
2SD2242
2SD2242A
2SD2242
2SD2242A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
2000 to 5000 4000 to 10000
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±
0.2
0.55
±
0.1
2.5
±
0.2
2.5
±
0.2
4.2
±
0.2
13.0
±
0.2
2.5
±
0.2
18.0
±
0.5
Solder Dip
5.0
±
0.1
2.25
±
0.2
1.2
±
0.1
0.65
±
0.1
0.55
±
0.1
C1.0
90
°
C1.0
1 2 3
1.05
±
0.1
0.35
±
0.1
B
E
C
2
Power Transistors
2SD2242, 2SD2242A
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
10
8
6
4
2
I
B
=4.0mA
T
C
=25°C
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
3.2
0.8
2.4
1.6
0
10
8
6
4
2
V
CE
=3V
T
C
=100°C
25°C
25°C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=250
T
C
=100°C
25°C
25°C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=3V
T
C
=100°C
25°C
25°C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25°C
10ms
t=1ms
DC
2SD2242
2SD2242A
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
3
10
2
10
2
1
10
1
10
10
3
10
4
0.1
1
10
100
1000
Note: R
th
was measured at Ta=25°C and under natural convection.
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(°C/W
)
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