Transistors
1
2SD1820A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1219A
I Features
· Low collector to emitter saturation voltage V
CE(sat)
· S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5
V
Peak collector current
I
CP
1
A
Collector current
I
C
500
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55 to +150
°C
I Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: X
Note) *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Product of no-rank is not classified and have no indication for rank.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
µA
Collector to base voltage
V
CBO
I
C
= 10 µA, I
E
= 0
60
V
Collector to emitter voltage
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter to base voltage
V
EBO
I
E
= 10 µA, I
C
= 0
5
V
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 10 V, I
C
= 150 mA
85
340
h
FE2
V
CE
= 10 V, I
C
= 500 mA
40
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
0.35
0.6
V
Transition frequency
*1
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
6
15
pF
Unit: mm
2.1
±0.1
1.3
±0.1
0.3
+0.1
0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
°
10
°
1: Base
2: Emitter
EIAJ: SC-70
3: Collector
S-Mini Type Package
2SD1820A
Transistors
2
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
0
160
40
120
80
0
240
200
160
120
80
40
Ambient temperature T
a
(
°C)
Collector power dissipation P
C
(mW)
0
800
700
600
500
400
300
200
100
0
20
4
8
16
12
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
I
B
= 10 mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25°C
0
10
8
6
4
2
0
800
700
600
500
400
300
200
100
Base current I
B
(mA)
Collector current
I
C
(mA)
V
CE
= 10 V
T
a
= 25°C
0.01
0.01
0.1
1
10
100
0.1
1
10
0.03
0.3
3
30
0.03
0.3
3
Collector to emitter saturation voltage
V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/ I
B
= 10
25
°C
-25°C
T
a
= 75°C
0.01
0.01
0.03
0.1
1
10
0.03
0.3
3
30
100
0.1
0.3
1
3
10
Base to emitter saturation voltage
V
BE(sat)
(V
)
Collector current I
C
(A)
I
C
/ I
B
= 10
T
a
= -25°C
25
°C
75
°C
0
0.01
300
250
200
150
100
50
0.1
1
10
0.03
0.3
3
25
°C
-25°C
V
CE
= 10 V
T
a
= 75°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
-1
-3
-10
-30
-100
0
240
200
160
120
80
40
-2
-20
-5
-50
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
= 10 V
T
a
= 25°C
0
1
12
10
8
6
4
2
3
10
30
100
2
20
5
50
I
E
= 0
f
= 1 MHz
T
a
= 25°C
Collector output capacitance C
ob
(
pF
)
Collector to base voltage V
CB
(V)
1
3
10
30
100
300
1 000
0
120
100
80
60
40
20
Collector to emitter voltage V
CER
(V
)
Base to emitter resistance R
BE
(k
)
I
C
= 2 mA
T
a
= 25°C
C
ob
V
CB
V
CER
R
BE
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