1
Power Transistors
2SD1775, 2SD1775A
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
s
Features
q
High foward current transfer ratio h
FE
q
Satisfactory linearity of foward current transfer ratio h
FE
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
100
60
80
6
4
2
0.5
25
1.3
150
55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
2SD1775
2SD1775A
2SD1775
2SD1775A
T
C
=25
°
C
Ta=25
°
C
s
Electrical Characteristics
(T
C
=25°C)
Parameter
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 300mA
I
C
= 1A, I
B
= 25mA
I
C
= 1A, I
B
= 25mA
V
CE
= 12V, I
C
= 200mA, f = 10MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 1A, I
B1
= 25mA, I
B2
= 25mA,
V
CC
= 50V
min
60
80
500
typ
40
30
0.6
2.5
1.0
max
100
100
100
100
1500
1.0
1.2
Unit
µ
A
µ
A
µ
A
V
V
V
MHz
pF
µ
s
µ
s
µ
s
2SD1775
2SD1775A
2SD1775
2SD1775A
*
h
FE
Rank classification
Rank
Q
P
h
FE
500 to 1000 800 to 1500
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±
0.2
6.0
±
0.5
10.0
±
0.3
10.5min.
2.0
1.5
±
0.1
1.5max.
0.8
±
0.1
5.08
±
0.5
2.54
±
0.3
1.1max.
0.5max.
1.0
±
0.1
3.4
±
0.3
2
1
3
Unit: mm
8.5
±
0.2
4.4
±
0.5
2.0
10.0
±
0.3
14.7
±
0.5
4.4
±
0.5
6.0
±
0.3
3.4
±
0.3
2.54
±
0.3
5.08
±
0.5
1.0
±
0.1
0.8
±
0.1
1.5
+0
0.4
3.0
+0.4
0.2
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
2
Power Transistors
2SD1775, 2SD1775A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
40
30
10
25
35
20
5
15
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=1.3W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
I
B
=3mA
T
C
=25°C
2mA
1mA
0.8mA
0.6mA
0.4mA
0.2mA
0.1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=40
T
C
=100°C
25°C
25°C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=40
25°C
100°C
T
C
=25°C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
T
C
=100°C
25°C
25°C
V
CE
=4V
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=12V
f=10MHz
T
C
=25°C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0
2.5
2.0
0.5
1.5
1.0
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=40 (I
B1
=I
B2
)
V
CC
=50V
T
C
=25°C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
µ
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25°C
I
CP
I
C
t=10ms
1ms
300ms
2SD1775
2SD1775A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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