1
Transistor
2SD1511
Silicon NPN epitaxial planer type darlington
For low-frequency output amplification
s
Features
q
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 2000.
q
A shunt resistor is omitted from the driver.
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s
Absolute Maximum Ratings
(Ta=25°C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC62
3:Emitter
Mini Power Type Package
4.5
±
0.1
2.6
±
0.1
2.5
±
0.1
0.4max.
1.0
+0.1
0.2
4.0
+0.25
0.20
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
1.6
±
0.2
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
100
80
5
1.5
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
(Ta=25°C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
µ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
µ
A, I
C
= 0
V
CE
= 10V, I
C
= 1A
*2
I
C
= 1.0A, I
B
= 1.0mA
*2
I
C
= 1.0A, I
B
= 1.0mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
min
100
80
5
4000
typ
150
max
100
100
40000
1.8
2.2
Unit
nA
nA
V
V
V
V
V
MHz
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
P
Internal Connection
B
C
E
*1
h
FE
Rank classification
Rank
Q
R
S
h
FE
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
Marking Symbol
PQ
PR
PS
2
Transistor
2SD1511
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
10
8
2
6
4
0
2.4
2.0
1.6
1.2
0.8
0.4
Ta=25°C
I
B
=200
µ
A
40
µ
A
60
µ
A
80
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
25°C
75°C
Ta=25°C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
Ta=25°C
25°C
75°C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=10V
Ta=75°C
25°C
25°C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
30
25
20
15
10
5
I
E
=0
f=1MHz
Ta=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
200
160
40
120
80
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
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