1
Transistor
2SC4968
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s
Features
q
Low noise figure NF.
q
High gain.
q
High transition frequency f
T
.
s
Absolute Maximum Ratings
(Ta=25°C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO92
EIAJ:SC43A
5.0
±
0.2
4.0
±
0.2
5.1
±
0.2
13.5
±
0.5
0.45
+0.2
0.1
0.45
+0.2
0.1
1.27
1.27
2.3
±
0.2
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
2
80
600
150
55 ~ +150
Unit
V
V
V
mA
mW
°C
°C
s
Electrical Characteristics
(Ta=25°C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
I
C
= 10
µ
A, I
E
= 0
I
C
= 100
µ
A, I
B
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
min
15
10
50
5
10
typ
150
6
0.7
13.5
15
max
1
1
300
1.2
2
Unit
µ
A
µ
A
V
V
GHz
pF
dB
dB
dB
2
Transistor
2SC4968
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
GUM -- I
C
NF -- I
C
0
160
40
120
80
140
20
100
60
0
800
600
200
500
700
400
100
300
Ambient temperature Ta (°C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
24
20
16
12
8
4
Ta=25°C
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
20
µ
A
I
B
=200
µ
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
=8V
Ta=75°C
25°C
25°C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
V
CE
=8V
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
12
10
8
6
4
2
V
CE
=8V
f=800MHz
Ta=25°C
Collector current I
C
(mA)
Transition frequency f
T
(GHz
)
0.1
1
10
100
0.3
3
30
0
2.4
2.0
1.6
1.2
0.8
0.4
I
E
=0
f=1MHz
Ta=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0
12
10
8
6
4
2
V
CE
=8V
(R
g
=50
)
f=800MHz
Ta=25°C
Collector current I
C
(mA)
Noise figure NF
(dB
)
0.1
1
10
100
0.3
3
30
0
24
20
16
12
8
4
V
CE
=8V
f=800MHz
Ta=25°C
Collector current I
C
(mA)
Maximum unilateral power gain GUM
(dB
)
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