1
Transistor
2SC4626
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1790
s
Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency f
T
.
q
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
s
Absolute Maximum Ratings
(Ta=25°C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC75
3:Collector
SSMini Type Package
1.6
±
0.15
1.6
±
0.1
1.0
±
0.1
0.75
±
0.15
0.45
±
0.1
0.5
0.3
0 to 0.1
0.5
0.8
±
0.1
0.4
0.4
0.2
+0.1 0.05
0.15
+0.1 0.05
1
2
3
0.2
±
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
125
125
55 ~ +125
Unit
V
V
V
mA
mW
°C
°C
s
Electrical Characteristics
(Ta=25°C)
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
I
CBO
h
FE
*
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= 1mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CB
= 10V, I
E
= 1mA, f = 5MHz
V
CB
= 10V, I
E
= 1mA, f = 2MHz
V
CB
= 10V, I
E
= 1mA, f = 10.7MHz
min
70
150
typ
250
2.8
22
0.9
max
0.1
220
4
50
1.5
Unit
µ
A
MHz
dB
pF
Marking symbol :
V
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
Marking Symbol
VB
VC
2
Transistor
2SC4626
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
Z
rb
-- I
E
0
160
40
120
80
140
20
100
60
0
150
125
100
75
50
25
Ambient temperature Ta (°C)
Collector power dissipation P
C
(mW
)
0
9
3
6
0
12
10
8
6
4
2
Ta=25°C
I
B
=100
µ
A
20
µ
A
40
µ
A
60
µ
A
80
µ
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
100
80
20
60
40
0
15.0
12.5
10.0
7.5
5.0
2.5
V
CE
=10V
Ta=25°C
Base current I
B
(
µ
A)
Collector current I
C
(mA
)
0
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
V
CE
=10V
Ta=25°C
Base to emitter voltage V
BE
(V)
Base current I
B
(
µ
A
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75°C
25°C
25°C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE
=10V
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
400
300
100
250
350
200
50
150
V
CB
=10V
f=100MHz
Ta=25°C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
0.3
1
3
10
0
60
50
40
30
20
10
V
CB
=10V
f=2MHz
Ta=25°C
Emitter current I
E
(mA)
Reverse transfer impedance Z
rb
(
)
3
Transistor
2SC4626
C
re
-- V
CE
PG -- I
E
NF -- I
E
b
ie
-- g
ie
b
re
-- g
re
b
fe
-- g
fe
b
oe
-- g
oe
0.1
1
10
100
0.3
3
30
0
3.0
2.5
2.0
1.5
1.0
0.5
f=10.7MHz
Ta=25°C
I
C
=3mA
1mA
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
0.1
1
10
100
0.3
3
30
0
24
20
16
12
8
4
V
CE
=10V
f=100MHz
Ta=25°C
Emitter current I
E
(mA)
Power gain PG
(dB
)
0.1
0.3
1
3
10
0
12
10
8
6
4
2
V
CB
=6V
f=100MHz
R
g
=50
Ta=25°C
Emitter current I
E
(mA)
Noise figure NF
(dB
)
0
40
32
8
24
16
0
24
20
16
12
8
4
V
ie
=g
ie
+jb
ie
V
CE
=10V
f=10.7MHz
I
E
=1mA
2mA
4mA
7mA
58
100
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS
)
0.5
0
0.1
0.4
0.2
0.3
0.6
0
0.1
0.2
0.3
0.4
0.5
y
re
=g
re
+jb
re
V
CE
=10V
f=10.7MHz
I
E
=1mA
58
100
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance b
re
(mS
)
0
100
80
20
60
40
120
0
20
40
60
80
100
y
fe
=g
fe
+jb
fe
V
CE
=10V
f=10.7MHz
100
10.7
0.1mA
1mA
2mA
I
E
=4mA
100
100
58
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance b
fe
(mS
)
0
0.5
0.4
0.1
0.3
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
oe
+jb
oe
V
CE
=10V
f=10.7MHz
I
E
=1mA
58
100
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS
)
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