1
Transistor
2SC4606
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1762
s
Features
q
High collector to emitter voltage V
CEO
.
q
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25°C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1.0
±
0.1
1.0
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
±
0.1
2.0
±
0.2
2.4
±
0.2
1.25
±
0.05
4.1
±
0.2
4
.5
±
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
80
80
5
1
0.5
1
150
55 ~ +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
(Ta=25°C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
µ
A, I
E
= 0
I
C
= 100
µ
A, I
B
= 0
I
E
= 10
µ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
130
50
typ
100
0.2
0.85
120
11
max
0.1
330
0.4
1.2
20
Unit
µ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
h
FE1
130 ~ 220
185 ~ 330
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2
Transistor
2SC4606
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
I
CBO
-- Ta
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Ta=25°C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=10V
Ta=25°C
Base current I
B
(mA)
Collector current I
C
(A
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25°C
25°C
75°C
Collector current I
C
(mA)
Base to emitter saturation voltage V
BE(sat)
(V
)
1
10
100
1000
3
30
300
0
300
250
200
150
100
50
V
CE
=10V
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
200
160
120
80
40
V
CB
=10V
Ta=25°C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
I
E
=0
f=1MHz
Ta=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
180
60
120
1
10
10
2
10
3
10
4
V
CB
=20V
Ambient temperature Ta (°C)
I
CBO
(Ta
)
I
CBO
(Ta=25°C
)
3
Transistor
2SC4606
I
CEO
-- Ta
Area of safe operation (ASO)
0
140
60
20
80
120
40
100
1
10
10
2
10
3
10
5
10
4
V
CE
=10V
Ambient temperature Ta (°C)
I
CEO
(Ta
)
I
CEO
(Ta=25°C
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25°C
t=10ms
t=1s
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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