Transistors
1
Publication date: February 2003
SJC00145BED
2SC3935
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Features
· High transition frequency f
T
· Small collector output capacitance (Common base, input open cir-
cuited) C
ob
and reverse transfer capacitance (Common base) C
rb
· S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
10
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
3
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
10
µA
Forward current transfer ratio
h
FE1
*1
V
CE
= 2.4 V, I
C
= 7.2 mA
75
220
h
FE2
V
CE
= 2.4 V, I
C
= 100 µA
75
h
FE
ratio
h
FE
*2
h
FE2
: V
CE
= 2.4 V, I
C
= 100 µA
0.75
1.60
h
FE1
: V
CE
= 2.4 V, I
C
= 7.2 mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 20 mA, I
B
= 4 mA
0.5
V
Transition frequency
f
T
V
CE
= 2.4 V, I
C
= 7.2 mA, f = 200 MHz
1.4
1.9
2.5
GHz
Collector output capacitance
C
ob
V
CB
= 4 V, I
E
= 0, f = 1 MHz
0.9
1.1
pF
(Common base, input open circuited)
Reverse transfer capacitance
C
rb
V
CB
= 4 V, I
E
= 0, f = 1 MHz
0.25
0.35
pF
(Common base)
Collector-base parameter
r
bb
' · C
C
V
CB
= 4 V, I
E
= -5 mA, f = 31.9 MHz
11.8
13.5
ps
Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Rank
P
Q
h
FE
75 to 130
110 to 220
2.1
±
0.1
1.3
±0.1
0.3
+0.1
0.0
2.0
±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5°
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 1S
*2:
h
FE
= h
FE2
/ h
FE1
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and semiconductors described in this material
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2002 JUL
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