Power Transistors
1
Publication date: February 2003
SJD00092BED
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
For low-frequency high power driver
Complementary to 2SA0794, 2SA0794A
Features
· High collector-emitter voltage (Base open) V
CEO
· Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
· TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings T
a
= 25°C
Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SC1567
V
CBO
100
V
(Emitter open)
2SC1567A
120
Collector-emitter voltage 2SC1567
V
CEO
100
V
(Base open)
2SC1567A
120
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
1.2
W
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SC1567
V
CEO
I
C
= 100 µA, I
B
= 0
100
V
(Base open)
2SC1567A
120
Emitter-base voltage (Collector open)
V
EBO
I
E
= 1 µA, I
C
= 0
5
V
Forward current transfer ratio
h
FE1
*
V
CE
= 10 V, I
C
= 150 mA
130
330
h
FE2
V
CE
= 5 V, I
C
= 500 mA
50
100
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.2
0.4
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.85
1.20
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
120
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
11
20
pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2
±0.2
0.75
±0.1
0.5
±0.1
2.3
±0.2
4.6
±0.2
0.5
±0.1
1.76
±0.1
1
2
3
3.16
±0.1
Rank
R
S
h
FE1
130 to 220
185 to 330
2SC1567, 2SC1567A
2
SJD00092BED
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
I
CEO
T
a
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
°C)
0
160
40
120
80
0
1.6
1.2
0.8
0.4
Without heat sink
0
0
12
2
10
4
8
6
1.2
1.0
0.8
0.6
0.4
0.2
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
T
C
=25°C
10mA
8mA
6mA
4mA
2mA
12mA
18mA
I
B
=20mA
16mA
14mA
0
0
15
10
5
1.2
1.0
0.8
0.6
0.4
0.2
Base current I
B
(mA)
Collector current I
C
(A)
V
CE
=10V
T
C
=25°C
0.001
1
0.01
0.1
1
10
10
100
1 000
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/I
B
=10
25°C
25°C
T
C
=100°C
0.01
1
0.1
1
10
100
10
100
1 000
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(mA)
I
C
/I
B
=10
T
C
=25°C
25°C
100°C
1
10
100
1 000
1
10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
10
2
10
4
10
3
25°C
V
CE
=10V
T
C
=100°C
25°C
-1
-10
-100
0
40
80
120
200
160
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
V
CB
=10V
f=200MHz
T
C
=25°C
1
10
100
0
50
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25°C
1
10
10
2
10
3
10
5
10
4
0
200
160
120
80
40
I
CEO
(T
a
)
I
CEO
(T
a
=
25
°
C
)
Ambient temperature T
a
(
°C)
V
CE
=20V
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2002 JUL
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