1
Power Transistors
2SB967
Silicon PNP epitaxial planar type
For low-frequency power amplification
s
Features
q
Possible to solder the radiation fin directly to printed cicuit board
q
Low collector to emitter saturation voltage V
CE(sat)
q
Large collector current I
C
s
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25
°
C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
27
18
7
8
5
20
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
(T
C
=25°C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
µ
A, I
C
= 0
V
CE
= 2V, I
C
= 2A
I
C
= 3A, I
B
= 0.1A
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
18
7
90
typ
120
max
100
1
625
1
85
Unit
nA
µ
A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
90 to 135
125 to 205
180 to 625
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5
±
0.1
5.3
±
0.1
4.35
±
0.1
4.6
±
0.1
2.3
±
0.1
0.75
±
0.1
1
2
3
0.93
±
0.1
2.5
±
0.1
0.8max
1.0
±
0.2
7.3
±
0.1
1.8
±
0.1
2.3
±
0.1
0.5
±
0.1
0.5
±
0.1
0.1
±
0.05
1.0
±
0.1
6.5
±
0.2
2.3
5.35
4.35
13.3
±
0.3
2.3
±
0.1
5.5
±
0.2
6.0
1.8
0.75
0.6
3
2.3
2
1
0.5
±
0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC63
U Type Package (Z)
Unit: mm
2
Power Transistors
2SB967
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
32
24
8
20
28
16
4
12
T
C
=Ta
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
T
C
=25°C
35mA
25mA
30mA
20mA
15mA
10mA
1mA
5mA
I
B
=40mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.0
1.6
0.4
1.2
0.8
0
12
10
8
6
4
2
V
CE
=2V
T
C
=100°C
25°C
25°C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=30
25°C
T
C
=100°C
25°C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=2V
T
C
=100°C
25°C
25°C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
240
200
160
120
80
40
V
CB
=6V
f=200MHz
T
C
=25°C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
200
160
120
80
40
I
E
=0
f=1MHz
T
C
=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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