1
Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
8
4
40
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB950
2SB950A
2SB950
2SB950A
T
C
=25
°
C
Ta=25
°
C
s
Electrical Characteristics
(T
C
=25°C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
BE
V
CE(sat)1
V
CE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= 12mA,
V
CC
= 50V
min
60
80
1000
2000
typ
20
0.3
2
0.5
max
200
200
500
500
2
10000
2.5
2
4
Unit
µ
A
µ
A
mA
V
V
V
V
MHz
µ
s
µ
s
µ
s
2SB950
2SB950A
2SB950
2SB950A
2SB950
2SB950A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
2000 to 5000 4000 to 10000
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4.2
±
0.2
3.1
±
0.1
B
C
E
2
Power Transistors
2SB950, 2SB950A
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
0
5
4
1
3
2
0
6
5
4
3
2
1
T
C
=25°C
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=3.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
3.2
0.8
2.4
1.6
0
10
8
6
4
2
V
CE
=3V
25°C
T
C
=100°C
25°C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=250
25°C
T
C
=100°C
25°C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
2
10
3
10
4
10
5
10
6
V
CE
=3V
T
C
=100°C
25°C
25°C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
t=1ms
10ms
I
CP
I
C
2SB950A
2SB950
Non repetitive pulse
T
C
=25°C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
Time t (s)
Thermal resistance R
th
(t)
(°C/W
)
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