1
Transistor
Marking symbol
: C
2SB767
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD875
s
Features
q
Large collector power dissipation P
C
.
q
High collector to emitter voltage V
CEO
.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25°C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC62
3:Emitter
Mini Power Type Package
4.5
±
0.1
2.6
±
0.1
2.5
±
0.1
0.4max.
1.0
+0.1
0.2
4.0
+0.25
0.20
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
1.6
±
0.2
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
80
80
5
1
0.5
1
150
55 ~ +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
(Ta=25°C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
µ
A, I
E
= 0
I
C
= 100
µ
A, I
B
= 0
I
E
= 10
µ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
90
50
typ
100
0.2
0.85
120
20
max
0.1
330
0.4
1.2
30
Unit
µ
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
90 ~ 155
130 ~ 220
185 ~ 330
Marking Symbol
CQ
CR
CS
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement
2
Transistor
2SB767
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25°C
I
B
=10mA
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
25°C
25°C
Ta=75°C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25°C
25°C
75°C
Collector current I
C
(mA)
Base to emitter saturation voltage V
BE(sat)
(V
)
1
10
100
1000
3
30
300
0
300
250
200
150
100
50
V
CE
=10V
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
CB
=10V
Ta=25°C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25°C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
Area of safe operation (ASO)
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