1
Transistor
2SA777
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1509
s
Features
q
High collector to emitter voltage V
CEO
.
q
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s
Absolute Maximum Ratings
(Ta=25°C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC51
TO92L Package
5.9
±
0.2
2.54
±
0.15
0.7
±
0.1
4.9
±
0.2
8.6
±
0.2
0.7
+0.3
0.2
13.5
±
0.5
3.2
0.45
+0.2
0.1
1.27
1.27
0.45
+0.2
0.1
1
3
2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
80
80
5
1
0.5
750
150
55 ~ +150
Unit
V
V
V
A
A
mW
°C
°C
s
Electrical Characteristics
(Ta=25°C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
µ
A, I
E
= 0
I
C
= 100
µ
A, I
B
= 0
I
E
= 10
µ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= 50mA, f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
80
80
5
90
50
typ
100
0.2
0.85
120
11
max
0.1
220
0.4
1.2
20
Unit
µ
A
V
V
V
V
V
MHz
pF
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 ~ 155
130 ~ 220
2
Transistor
2SA777
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25°C
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=10V
Ta=25°C
Base current I
B
(mA)
Collector current I
C
(A
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25°C
25°C
75°C
Collector current I
C
(mA)
Base to emitter saturation voltage V
BE(sat)
(V
)
1
10
100
1000
3
30
300
0
300
250
200
150
100
50
V
CE
=10V
Ta=75°C
25°C
25°C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
CB
=10V
Ta=25°C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25°C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
180
60
120
1
10
10
2
10
3
10
4
V
CB
=20V
Ambient temperature Ta (°C)
I
CBO
(Ta
)
I
CBO
(Ta=25°C
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
I
CBO
-- Ta
3
Transistor
2SA777
0
140
60
20
80
120
40
100
1
10
10
2
10
3
10
5
10
4
V
CE
=10V
Ambient temperature Ta (°C)
I
CEO
(Ta
)
I
CEO
(Ta=25°C
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25°C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
I
CEO
-- Ta
Area of safe operation (ASO)
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