1
IGBTs
unit: mm
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: V
CES
= 400V
q Allowing to control large current: I
C(peak)
= 130A
q Allowing to provide with the surface mounting package
s Applications
q For flash-light for use in a camera
1: Gate
2: Collector
3: Emitter
I Type Package
s Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
ch
T
stg
Ratings
400
±8
5
130
15
1.3
150
-
55 to +150
Unit
V
V
A
A
W
°C
°C
s Electrical Characteristics
(T
C
= 25°C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
CES
I
GES
V
CES
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
CE
= 320V, V
GE
= 0
V
GE
= ±8V, V
CE
= 0
I
C
= 1mA, V
GE
= 0
V
CE
= 10V, I
C
= 1mA
V
GE
= 5V, I
C
= 5A
V
GE
= 5V, I
C
= 130A
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V, I
C
= 130A
V
GE
= 5V, R
g
= 25
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
µ
A
µ
A
V
V
V
pF
ns
µ
s
ns
µ
s
7.2±0.3
7.0±0.3
3.0±0.2
3.5±0.2
10.0
+0.3
0.
0.8±0.2
1.0±0.2
4.6±0.4
2
1
3
1.1±0.1
0.75±0.1
2.3±0.2
0.85±0.1
0.4±0.1
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