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Part Number T2322B

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©
Semiconductor Components Industries, LLC, 2000
May, 2000 ­ Rev. 3
1
Publication Order Number:
T2322/D
T2322B
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for ac power switching. The gate sensitivity of
these triacs permits the use of economical transistorized or integrated
circuit control circuits, and it enhances their use in low-power phase
control and load-switching applications.
·
Very High Gate Sensitivity
·
Low On-State Voltage at High Current Levels
·
Glass-Passivated Chip for Stability
·
Small, Rugged Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
·
Device Marking: Device Type, e.g., T2322B, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1)
(TJ = 25 to 110
°
C, Gate Open)
VDRM,
VRRM
200
Volts
On-State RMS Current (TC = 70
°
C)
(Full Cycle Sine Wave 50 to 60 Hz)
IT(RMS)
2.5
Amps
Peak Non­Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = 70
°
C)
ITSM
25
Amps
Circuit Fusing Consideration
(t = 8.3 ms)
I2t
2.6
A2s
Peak Gate Power
(Pulse Width
10
µ
s, TC = 70
°
C)
PGM
10
Watts
Average Gate Power
(t = 8.3 ms, TC = 70
°
C)
PG(AV)
0.5
Watt
Peak Gate Current
(Pulse Width = 10
µ
s, TC = 70
°
C)
IGM
0.5
Amp
Operating Junction Temperature Range
TJ
­40 to
+110
°
C
Storage Temperature Range
Tstg
­40 to
+150
°
C
Mounting Torque (6-32 Screw)(2)
--
8.0
in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of torque washer (Shakeproof WD19523 or
equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably
lower case-to-sink thermal resistance. Main terminal 2 and heat-sink
contact pad are common.
TRIACS
2.5 AMPERES RMS
200 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
T2322B
TO225AA
500/Box
http://onsemi.com
TO­225AA
(formerly TO­126)
CASE 077
STYLE 5
1
2
3
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
MT1
G
MT2
T2322B
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
3.5
°
C/W
Thermal Resistance, Junction to Ambient
R
JA
60
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
°
C
TJ = 110
°
C
IDRM,
IRRM
--
--
--
0.2
10
0.75
µ
A
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(ITM =
"
10 A)
VTM
--
1.7
2.2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
All Quadrants
IGT
--
--
10
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100
, TC = 25
°
C)
VGT
--
1.0
2.2
Volts
Gate Non­Trigger Voltage
(VD = 12 V, RL = 100
, TC = 110
°
C)
VGD
0.15
--
--
Volts
Holding Current
(VD = 12 V, IT (Initiating Current) =
"
200 mA, Gate Open)
IH
--
15
30
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA, tr = 0.1
µ
sec)
tgt
--
1.8
2.5
µ
s
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100
°
C)
dv/dt
10
100
--
V/
µ
s
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90
°
C)
dv/dt(c)
1.0
4.0
--
V/
µ
s
(1) Pulse Test: Pulse Width
1.0 ms, Duty Cycle
2%.
T2322B
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 ­
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(­) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(­) MT2
REF
MT1
(­) IGT
GATE
(­) MT2
REF
­
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III
Quadrant IV
Quadrant II
Quadrant I
Quadrant Definitions for a Triac
IGT ­
+ IGT
All polarities are referenced to MT1.
With in­phase signals (using standard AC lines) quadrants I and III are used.
T2322B
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
­B­
­A­
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.065
1.15
1.65
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
­­­
1.02
­­­
_
_
STYLE 5:
PIN 1. MT 1
2. MT 2
3. GATE
TO­225AA
(formerly TO­126)
CASE 077­09
ISSUE W
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T2322/D
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