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Part Number SS12T3

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Semiconductor Components Industries, LLC, 2005
July, 2005 - Rev. 3
1
Publication Order Number:
SS12/D
SS12, SS14
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
·
Small Compact Surface Mountable Package with J-Bent Leads
·
Rectangular Package for Automated Handling
·
Highly Stable Oxide Passivated Junction
·
Guardring for Stress Protection
·
Pb-Free Packages are Available
Mechanical Characteristics
·
Case: Epoxy, Molded
·
Epoxy Meets UL 94 V-0 @ 0.125 in
·
Weight: 70 mg (approximately)
·
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
·
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
·
Shipped in 12 mm tape, 5000 units per 13 inch reel
·
Polarity: Cathode Lead Indicated by Polarity Band
·
Device Meets MSL 1 Requirements
·
ESD Ratings: Human Body Model, 3B (> 8000 V)
Machine Model, B (> 200 V)
Device
Package
Shipping
ORDERING INFORMATION
SS12T3
SMA
5000/Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20, 40 VOLTS
MARKING DIAGRAM
SMA
CASE 403D
PLASTIC
http://onsemi.com
SS14T3
SMA
5000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SS1x
= Specific Device Code
x
= 2 or 4
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
SS1x
AYWW
G
SS12T3G
SMA
(Pb-Free)
5000/Tape & Reel
SS14T3G
SMA
(Pb-Free)
5000/Tape & Reel
SS12, SS14
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2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
SS12
SS14
V
RRM
V
RWM
V
R
20
40
V
Average Rectified Forward Current
(At Rated V
R
, T
C
= 120
°
C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 120
°
C)
I
FRM
2.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
60
A
Storage/Operating Case Temperature
T
stg
, T
C
-55 to +150
°
C
Operating Junction Temperature
T
J
-55 to +150
°
C
Voltage Rate of Change
(Rated V
R
, T
J
= 25
°
C)
dv/dt
10,000
V/
m
s
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction-to-Lead (Note 1)
Thermal Resistance,
Junction-to-Ambient (Note 1)
R
q
JL
R
q
JA
35
86
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage
(Note 2)
see Figure 2for other Values
(I
F
= 1.0 A)
V
F
T
J
= 25
°
C
V
0.47
Maximum Instantaneous Reverse Current
see Figure 4 for other Values
(V
R
= 20 V)
(V
R
= 40 V)
I
R
T
J
= 25
°
C
T
J
= 100
°
C
mA
0.045
0.1
2.0
5.0
1. Mounted on 2 in Square PC Board with 1 in Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width
250
m
s, Duty Cycle
2.0%.
0.1
1
10
0.10
0.30
0.50
0.70
0.90
I
F
,
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT (A)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
T
J
= 150
°
C
T
J
= 100
°
C
T
J
= -55
°
C
T
J
= 25
°
C
0.1
1
10
0.10
0.30
0.50
0.70
0.90
T
J
= -55
°
C
T
J
= 25
°
C
T
J
= 150
°
C
T
J
= 100
°
C
I
F
, INST
ANT
ANEOUS FOR
W
ARD
CURRENT (A)
V
F
, MAXIMUM FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
SS12, SS14
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3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
0
10
20
30
40
T
J
= 100
°
C
T
J
= 150
°
C
T
J
= 25
°
C
I
R
, REVERSE CURRENT (A)
V
R
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 3. Typical Reverse Current
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
0
10
20
30
40
I
R
,
MAXIMUM REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
T
J
= 100
°
C
T
J
= 150
°
C
T
J
= 25
°
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
25
45
65
85
105
125
145
I
O
, A
VERAGE
FOR
W
ARD
CURRENT
(A)
T
L
, LEAD TEMPERATURE (
°
C)
Figure 5. Current Derating
dc
Square Wave
I
pk
/I
O
= p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
freq = 20 kHz
0
0.05
0.1
0.15
0.2
0.25
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
P
FO
,
A
VERAGE POWER DISSIP
A
-
TION (W)
I
O
, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
dc
Square Wave
I
pk
/I
O
= p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
10
100
1000
0
5
10
15
20
25
30
35
40
45
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance
T
J
= 100
°
C
C, CAP
ACIT
ANCE
(pF)
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01
0.1
1.0
10
100
1000
t, TIME (sec)
Figure 8. Thermal Response
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.01
Single Pulse
P
(pk)
Duty Cycle, D = t
1
/t
2
t
1
t
2
r
(t)
,
TRANSIENT THERMAL
RESIST
ANCE
Test Type > Min Pad
Theta JC = min pad 1 oz C/W
SS12, SS14
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4
PACKAGE DIMENSIONS
SMA
CASE 403D-02
ISSUE C
4.0
0.157
2.0
0.0787
2.0
0.0787
mm
inches
SCALE 8:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN
NOM
MAX
MIN
MILLIMETERS
1.91
2.16
2.41
0.075
INCHES
A1
0.05
0.10
0.15
0.002
b
1.27
1.45
1.63
0.050
c
0.15
0.28
0.41
0.006
D
2.29
2.60
2.92
0.090
E
4.06
4.32
4.57
0.160
L
0.76
1.14
1.52
0.030
0.085
0.095
0.004
0.006
0.057
0.064
0.011
0.016
0.103
0.115
0.170
0.180
0.045
0.060
NOM
MAX
4.83
5.21
5.59
0.190
0.205
0.220
H
E
E
b
D
L
c
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D-01 OBSOLETE, NEW STANDARD IS 403D-02.
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
H
E
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
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SS12/D
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