Semiconductor Components Industries, LLC, 2000

November, 2000 Rev.3

Publication Order Number:

MTB60N06HD/D

MTB60N06HD

Preferred Device

Power MOSFET

60 Amps, 60 Volts

NChannel D2PAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.

Avalanche Energy Specified

SourcetoDrain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS(on) Specified at Elevated Temperature

Short Heatsink Tab Manufactured Not Sheared

Specially Designed Leadframe for Maximum Power Dissipation

MAXIMUM RATINGS

(TC = 25

C unless otherwise noted)

Rating

Symbol

Value

Unit

DrainSource Voltage

VDSS

Vdc

DrainGate Voltage (RGS = 1.0 M

)

VDGR

Vdc

GateSource Voltage

Continuous
NonRepetitive (tp

10 ms)

VGS

VGSM

Vdc
Vpk

Drain Current Continuous

Drain Current

Continuous @ 100

Drain Current

Single Pulse (tp

ID
ID

IDM

42.3

180

Adc

Apk

Total Power Dissipation

Derate above 25

Total Power Dissipation @ TA = 25

(Note 1.)

125

1.0
2.5

Watts

Operating and Storage Temperature

Range

TJ, Tstg

55 to

150

Single Pulse DraintoSource Avalanche

Energy Starting TJ = 25

(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 60 Apk, L = 0.3 mH, RG = 25

)

EAS

540

Thermal Resistance

Junction to Case
Junction to Ambient
Junction to Ambient, when mounted

with the minimum recommended pad size

1.0

62.5

C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

from case for 10

seconds

260

1. When mounted with the minimum recommended pad size.

MARKING DIAGRAM

& PIN ASSIGNMENT

T60N06HD
YWW

Gate

Drain

3
Source

60 AMPERES

60 VOLTS

RDS(on) = 14 m

Device

Package

Shipping

ORDERING INFORMATION

MTB60N06HD

D2PAK

50 Units/Rail

D2PAK

CASE 418B

STYLE 2

http://onsemi.com

NChannel

T60N06HD

= Device Code

= Year

= Work Week

MTB60N06HDT4

D2PAK

800/Tape & Reel

Preferred devices are recommended choices for future use
and best overall value.

MTB60N06HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS

(TJ = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DraintoSource Breakdown Voltage

(Cpk

2.0) (Note 4.)

(VGS = 0 Vdc, ID = 250

Adc)

Temperature Coefficient (Positive)

V(BR)DSS

Vdc

mV/

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125

IDSS

100

Adc

GateBody Leakage Current

(VGS =

20 Vdc, VDS = 0 Vdc)

IGSS

100

nAdc

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(Cpk

3.0) (Note 4.)

(VDS = VGS, ID = 250

Adc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

3.0
7.0

4.0

Vdc

mV/

Static DrainSource OnResistance

(Cpk

3.0) (Note 4.)

(VGS = 10 Vdc, ID = 30 Adc)

RDS(on)

0.011

0.014

Ohm

DrainSource OnVoltage (VGS = 10 Vdc)

(ID = 60 Adc)
(ID = 30 Adc, TJ =125

VDS(on)

1.0
0.9

Vdc

Forward Transconductance

(VDS = 4.0 Vdc, ID = 30 Adc)

gFS

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

25 Vd

0 Vd

Ciss

1950

2800

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

660

920

Transfer Capacitance

f = 1.0 MHz)

Crss

147

300

SWITCHING CHARACTERISTICS (Note 3.)

TurnOn Delay Time

td(on)

Rise Time

(VDD= 30 Vdc, ID = 60 Adc,

VGS = 10 Vdc

197

394

TurnOff Delay Time

VGS = 10 Vdc,

RG = 9.1

)

td(off)

102

Fall Time

RG 9.1

)

124

246

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 60 Adc,

(VDS 48 Vdc, ID 60 Adc,

VGS = 10 Vdc)

SOURCEDRAIN DIODE CHARACTERISTICS

Forward OnVoltage

(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc,

TJ = 125

VSD

0.99
0.89

1.0

Vdc

Reverse Recovery Time

15)

trr

(See Figure 15)

(IS = 60 Adc, VGS = 0 Vdc,

(IS 60 Adc, VGS 0 Vdc,

dIS/dt = 100 A/

Reverse Recovery Stored Charge

QRR

0.143

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25

from package to center of die)

4.5

Internal Source Inductance

(Measured from the source lead 0.25

from package to source bond pad)

7.5

2. Pulse Test: Pulse Width

300

s, Duty Cycle

2%.

3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.

Cpk =

Max limit Typ

3 x SIGMA

MTB60N06HD

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TYPICAL ELECTRICAL CHARACTERISTICS

R DS(on)

, DRAIN-T

O-SOURCE RESIST

ANCE

(NORMALIZED)

R DS(on)

, DRAIN-T

O-SOURCE RESIST

ANCE (OHMS)

R DS(on)

, DRAIN-T

O-SOURCE RESIST

ANCE (OHMS)

ID, DRAIN CURRENT (AMPS)

TJ, JUNCTION TEMPERATURE (

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

I DSS

, LEAKAGE (nA)

ID, DRAIN CURRENT (AMPS)

I D

, DRAIN CURRENT

(AMPS)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I D

, DRAIN CURRENT

(AMPS)

120

100

1.0

2.0

3.0

4.0

5.0

120

Figure 1. OnRegion Characteristics

2.0

2.8

3.6

4.4

6.0

7.6

Figure 2. Transfer Characteristics

120

0.006

0.008

0.012

0.016

0.020

0.0100

0.0108

0.0116

0.0124

0.0132

Figure 3. OnResistance versus Drain Current

and Temperature

Figure 4. OnResistance versus Drain Current

and Gate Voltage

- 50

0.6

0.8

1.0

1.4

1.8

100

1000

Figure 5. OnResistance Variation with

Temperature

Figure 6. DraintoSource Leakage

Current versus Voltage

- 25

100

125

150

100

0.5

1.5

2.5

3.5

4.5

6.8

0.018

0.014

0.010

100

120

100

0.0128

0.0120

0.0112

0.0104

1.2

1.6

VGS = 10 V

9 V

8 V

100

TJ = - 55

TJ = 25

15 V

VGS = 10 V

- 55

VGS = 0 V

TJ = 125

100

5 V

6 V

TJ = 25

7 V

110

VDS

10 V

5.2

VGS = 10 V

ID = 30 A

TJ = 100

MTB60N06HD

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POWER MOSFET SWITCHING

Switching behavior is most easily modeled and predicted

by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (

are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because draingate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that

t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:

tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where

VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:

td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)

The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the offstate condition when
calculating td(on) and is read at a voltage corresponding to the
onstate when calculating td(off).

At high switching speeds, parasitic circuit elements

complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.

The resistive switching time variation versus gate

resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.

GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)

C, CAP

ACIT

ANCE (pF)

1000

2000

3000

5000

Figure 7. Capacitance Variation

4000

VGS

VDS

VDS = 0 V

Ciss

Crss

VGS = 0 V

TJ = 25

Ciss

Coss

Crss

MTB60N06HD

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QT, TOTAL GATE CHARGE (nC)

RG, GATE RESISTANCE (Ohms)

t, TIME

(ns)

V DS

, DRAIN-T

O-SOURCE VOL

T
AGE (VOL

TS)

V GS

, GA

TE-T

O-SOURCE VOL

T
AGE (VOL

TS)

Figure 8. GateToSource and DrainToSource

Voltage versus Total Charge

100

1000

VDD = 30 V

ID = 60 A

VGS = 10 V

TJ = 25

tr
tf

td(on)

td(off)

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

VGS

ID = 60 A

TJ = 25

VDS

DRAINTOSOURCE DIODE CHARACTERISTICS

The switching characteristics of a MOSFET body diode

are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.

System switching losses are largely due to the nature of

the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.

The abruptness of diode reverse recovery effects the

amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by

high di/dts. The diode's negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.

Compared to ON Semiconductor standard cell density

low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.

I S

, SOURCE CURRENT

(AMPS)

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

0.5

0.6

0.7

0.8

0.9

1.0

VGS = 0 V

TJ = 25

Part Number MTB60N06HD