Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
MPS8098
MPS8598
MPS8099
MPS8599
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCBO
60
80
Vdc
EmitterBase Voltage
VEBO
6.0
5.0
Vdc
Collector Current Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
°
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
°
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
©
Semiconductor Components Industries, LLC, 2001
September, 2001 Rev. 2
1
Publication Order Number:
MPS8098/D
NPN
MPS8098
MPS8099
PNP
MPS8598
MPS8599
*ON Semiconductor Preferred Device
*
CASE 2911, STYLE 1
TO92 (TO226AA)
1
2
3
*
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
NPN MPS8098 MPS8099 PNP MPS8598 MPS8599
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS8098, MPS8598
MPS8099, MPS8599
V(BR)CEO
60
80
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100
µ
Adc, IE = 0)
MPS8098, MPS8598
MPS8099, MPS8599
V(BR)CBO
60
80
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 10
µ
Adc, IC = 0)
MPS8098, MPS8099
MPS8598, MPS8599
V(BR)EBO
6.0
5.0
--
--
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES
--
0.1
µ
Adc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MPS8098, MPS8598
(VCB = 80 Vdc, IE = 0)
MPS8099, MPS8599
ICBO
--
--
0.1
0.1
µ
Adc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
MPS8098, MPS8099
(VEB = 4.0 Vdc, IC = 0)
MPS8598, MPS8599
IEBO
--
--
0.1
0.1
µ
Adc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle = 2.0%.
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
100
100
75
300
--
--
--
CollectorEmitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
--
--
0.4
0.3
Vdc
BaseEmitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MPS8098, MPS8598
(IC = 10 mAdc, VCE = 5.0 Vdc)
MPS8099, MPS8599
VBE(on)
0.5
0.6
0.7
0.8
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
150
--
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
Cobo
--
--
6.0
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MPS8098, MPS8099
MPS8598, MPS8599
Cibo
--
--
25
30
pF
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle = 2.0%.
NPN MPS8098 MPS8099 PNP MPS8598 MPS8599
http://onsemi.com
3
Figure 1. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response
t, TIME (ms)
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k 100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r(t), NORMALIZED
TRANSIENT
THERMAL
RESIST
ANCE
Z
JC(t) = r(t)
·
R
JC
TJ(pk) - TC = P(pk) Z
JC(t)
Z
JA(t) = r(t)
·
R
JA
TJ(pk) - TA = P(pk) Z
JA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
t1
t2
DUTY CYCLE, D = t1/t2
P(pk)
D = 0.5
0.2
0.1
0.02 0.01
SINGLE PULSE
SINGLE PULSE
0.05
Figure 2. Switching Time Test Circuits
OUTPUT
TURN-ON TIME
-1.0 V
VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN-OFF TIME
+VBB
VCC
+40 V
RL
* CS t 6.0 pF
RB
100
100
Vin
5.0 mF
tr = 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
NPN MPS8098 MPS8099 PNP MPS8598 MPS8599
http://onsemi.com
4
Figure 3. MPS8098/99 CurrentGain --
Bandwidth Product
Figure 4. MPS8598/99 CurrentGain --
Bandwidth Product
Figure 5. MPS8098/99 Capacitance
Figure 6. MPS8598/99 Capacitance
Figure 7. MPS8098/99 Switching Times
Figure 8. MPS8598/99 Switching Times
100
2.0
IC, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
IC, COLLECTOR CURRENT (mA)
-100
-10
200
100
70
50
30
10
100
0.1
VR, REVERSE VOLTAGE (VOLTS)
40
20
10
6.0
VR, REVERSE VOLTAGE (VOLTS)
-1.0
-100
-0.1
-2.0
20
TJ = 25
°
C
TJ = 25
°
C
f T
, CURRENT-GAIN - BANDWIDTH PRODUCT
(MHz)
NPN
PNP
C, CAP
ACIT
ANCE (pF)
3.0
5.0 7.0 10
20 30
50 70
-2.0 -3.0 -5.0 -7.0
-20 -30
-50 -70
300
f T
, CURRENT-GAIN - BANDWIDTH PRODUCT
(MHz)
50
1.0
2.0
5.0
0.2
0.5
4.0
2.0
Cibo
Cobo
-0.2
-0.5
-5.0 -10 -20
-50
TJ = 25
°
C
20
10
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10
IC, COLLECTOR CURRENT (mA)
-10
500
200
100
50
20
10
-100
100
t, TIME
(ns)
t, TIME
(ns)
50
200
1.0 k
500
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
tr
-50
-200
1.0 k
30
70
300
700
30
70
td @ VBE(off) = 0.5 V
300
700
70
30
-70
-20
-30
C, CAP
ACIT
ANCE (pF)
1.0
VCE = 1.0 V
5.0 V
TJ = 25
°
C
VCE = -1.0 V
-5.0 V
-1.0
40
20
10
6.0
TJ = 25
°
C
4.0
2.0
Cibo
Cobo
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
tr
td @ VBE(off) = -0.5 V
8.0
8.0
NPN MPS8098 MPS8099 PNP MPS8598 MPS8599
http://onsemi.com
5
Figure 9. MPS8098/99 ActiveRegion Safe
Operating Area
Figure 10. MPS8598/99 ActiveRegion Safe
Operating Area
Figure 11. MPS8098/99 DC Current Gain
Figure 12. MPS8598/99 DC Current Gain
Figure 13. MPS8098/99 "ON" Voltages
Figure 14. MPS8598/99 "ON" Voltages
2.0
0.2
IC, COLLECTOR CURRENT (mA)
400
200
100
80
60
40
10
, DC CURRENT
GAIN
NPN
PNP
TJ = 125
°
C
10
200
1.0
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
100
TJ = 25
°
C
V
,
VOL
T
AGE (VOL
TS)
V
,
VOL
T
AGE (VOL
TS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
10
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
200
100
50
20
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-10
-50
-1.0
-500
-200
-100
-50
-20
-10
-20
30
I C
, COLLECT
OR CURRENT
(mA)
-2.0
-5.0
-1.0 k
2.0
5.0
50
1.0 k
I C
, COLLECT
OR CURRENT
(mA)
MPS8098
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8099
100
70
20
3.0
7.0
1.0
3.0 5.0
VCE = 5.0 V
20
100
30 50
200
h FE
25
°
C
-55
°
C
0.2
2.0
20
50
IC, COLLECTOR CURRENT (mA)
, DC CURRENT
GAIN
h FE
IC, COLLECTOR CURRENT (mA)
700
300
30
70
MPS8598
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8599
-3.0
-7.0
-30
-100
-70
-30
-70
-300
-700
0.3 0.5
-2.0
-0.2
300
200
100
70
50
30
-10
TJ = 125
°
C
-1.0
-5.0
VCE = -5.0 V
-20
-100
-50
-200
25
°
C
-55
°
C
-0.5
0.5
5.0
10
200
1.0
1.0
0.8
0.6
0.4
0.2
0
100
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
0.2
2.0
20
50
0.5
5.0
DUTY CYCLE
10%
DUTY CYCLE
10%
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