Semiconductor Components Industries, LLC, 2004

March, 2004 - Rev. 4

Publication Order Number:

MMT05A230T3/D

MMT05A230T3,

MMT05A260T3,

MMT05A310T3

Preferred Devices

Thyristor Surge Protectors

High Voltage Bidirectional TSPD

These Thyristor Surge Protective devices (TSPD) prevent

overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover-triggered crowbar
protectors. Turn-off occurs when the surge current falls below the
holding current value.

Secondary protection applications for electronic telecom equipment

at customer premises.

High Surge Current Capability: 50 Amps 10 x 1000

sec; for

Controlled Temperature Environments in the SMA package

The MMT05A230T3 Series is used to help equipment meet various

regulatory requirements including: Telcordia 1089, ITU K.20 &
K.21, IEC 950 and FCC Part 68

Bidirectional Protection in a Single Device

Little Change of Voltage Limit with Transient Amplitude or Rate

Freedom from Wearout Mechanisms Present in Non-Semiconductor

Devices

Fail-Safe, Shorts When Overstressed, Preventing Continued

Unprotected Operation

Surface Mount Technology (SMT)

Indicates UL Registered - File #E210057

Device Marking: MMT05A230T3: PBF; MMT05A260T3: PBG;

MMT05A310T3: PBJ

MAXIMUM RATINGS

= 25

C unless otherwise noted)

Rating

Symbol

Value

Unit

Off-State Voltage - Maximum

MMT05A230T3
MMT05A260T3
MMT05A310T3

170

200

270

Volts

Maximum Pulse Surge Short Circuit

Current Non-Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)

8 x 20

sec

10 x 160

sec

10 x 560

sec

10 x 1000

sec

PPS1

PPS2

PPS3

PPS4

150

100

A(pk)

Maximum Non-Repetitive Rate of

Change of On-State Current Double
Exponential Waveform,
I

= 50 A, P

= 15

di/dt

100

1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.

BIDIRECTIONAL TSPD

50 AMP SURGE

265 thru 365 VOLTS

Preferred devices are recommended choices for future use
and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MMT05A230T3

SMA

12 mm Tape and Reel

(5 K/Reel)

MMT05A260T3

SMA

12 mm Tape and Reel

(5 K/Reel)

MMT05A310T3

SMA

12 mm Tape and Reel

(5 K/Reel)

MT1

MT2

SMA

(No Polarity)

CASE 403D

xxx

= Specific Device Code

= Assembly Location

= Year

= Work Week

MARKING DIAGRAM

xxx
AYW

http://onsemi.com

For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

MMT05A230T3, MMT05A260T3, MMT05A310T3

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Operating Temperature Range

Blocking or Conducting State

- 40 to + 125

Overload Junction Temperature - Maximum Conducting State Only

+ 175

Instantaneous Peak Power Dissipation (I

= 50A, 10x1000

sec @ 25

2000

Maximum Lead Temperature for Soldering Purposes 1/8

from Case for 10 Seconds

260

ELECTRICAL CHARACTERISTICS

= 25

C unless otherwise noted)

Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.

Characteristics

Symbol

Min

Typ

Max

Unit

Breakover Voltage (Both polarities)

(dv/dt = 100 V/

s, I

= 1.0 A, Vdc = 1000 V)

MMT05A230T3
MMT05A260T3
MMT05A310T3

(+65

MMT05A230T3
MMT05A260T3
MMT05A310T3

(BO)

-
-
-

265
320
365

280
340
400

Volts

Breakover Voltage (Both polarities)

(f = 60 Hz, I

= 1.0 A(rms), V

= 1000 V(rms),

MMT05A230T3

= 1.0 k

, t = 0.5 cycle) (Note 3)

MMT05A260T3
MMT05A310T3

(+65

MMT05A230T3
MMT05A260T3
MMT05A310T3

(BO)

-
-
-

265
320
365

280
340
400

Volts

Breakover Voltage Temperature Coefficient

(BO)

/dT

0.08

Breakdown Voltage (I

(BR)

= 1.0 mA) Both polarities

MMT05A230T3
MMT05A260T3
MMT05A310T3

(BR)

-
-
-

190
240
280

-
-
-

Volts

Off State Current (V

= 50 V) Both polarities

Off State Current

= V

) Both polarities

-
-

2.0
5.0

On-State Voltage (I

= 1.0 A)

(PW

300

s, Duty Cycle

2%) (Note 3)

1.53

3.0

Volts

Breakover Current (f = 60 Hz, V

= 1000 V(rms), R

= 1.0 k

)

Both polarities

230

Holding Current (Both polarities)

(Note 3)

= 500 Volts; I

(Initiating Current) =

1.0 Amp

150

340

Critical Rate of Rise of Off-State Voltage

(Linear waveform, V

= Rated V

, T

= 25

dv/dt

2000

Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal)

Capacitance

(f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal)

-
-

22
35

3. Measured under pulse conditions to reduce heating.

MMT05A230T3, MMT05A260T3, MMT05A310T3

http://onsemi.com

+ Current

+ Voltage

(BO)

(BR)

Symbol

Parameter

, I

Off State Leakage Current

, V

Off State Blocking Voltage

Breakdown Voltage

Breakover Voltage

Breakover Current

Holding Current

On State Voltage

Voltage Current Characteristic of TSPD

(Bidirectional Device)

Figure 1. Off-State Current versus Temperature

TEMPERATURE (

140

120

100

0.1

0.01

I D1

, OFF-ST

A
TE CURRENT

(

Figure 2. Typical Breakdown Voltage versus

Temperature

TEMPERATURE (

, BREAKDOWN VOL

T
AGE (VOL

TS)

= 50V

320

300

280

260

240

220

200

180

160

340

MMT05A230T3

MMT05A260T3

MMT05A310T3

-10

MMT05A230T3, MMT05A260T3, MMT05A310T3

http://onsemi.com

Figure 3. Typical Breakover Voltage versus

Temperature

Figure 4. Typical Holding Current versus

Temperature

TEMPERATURE (

100

200

300

400

500

600

700

800

I H

, HOLDING CURRENT

(mA)

, BREAKOVER VOL

T
AGE (VOL

TS)

TEMPERATURE (

320

300

280

260

240

220

200

180

160

340

MMT05A230T3

MMT05A260T3

MMT05A310T3

TIME (sec)

100

0.1

0.01

0.001

100

CURRENT

(A)

Figure 5. Exponential Decay Pulse Waveform

TIME (ms)

Ipp - PEAK PULSE CURRENT

- %Ipp

100

= rise time to peak value

= decay time to half value

Peak
Value

Half Value

Figure 6. Peak Surge On-State Current versus

Surge Current Duration, Sinusoidal Waveform

-10

Part Number MMT05A230T3