╘

Semiconductor Components Industries, LLC, 2004

April, 2004 - Rev. 4

Publication Order Number:

2N3055/D

2N3055, MJ2955

Preferred Device

Complementary Silicon

Power Transistors

. . . designed for general-purpose switching and amplifier

applications.

DC Current Gain - h

= 20 -70 @ I

= 4 Adc

Collector-Emitter Saturation Voltage -

CE(sat)

= 1.1 Vdc (Max) @ I

= 4 Adc

Excellent Safe Operating Area

Pb-Free Package is Available

MAXIMUM RATINGS

нннннннннннн

Rating

ннн

Symbol

ннннн

Value

нн

Unit

нннннннннннн

Collector-Emitter Voltage

ннн

CEO

ннннн

нн

Vdc

нннннннннннн

Collector-Emitter Voltage

ннн

CER

ннннн

нн

Vdc

нннннннннннн

нннннннннн

нннннннннннн

Collector-Base Voltage

ннн

ннннн

ннн

ннннн

100

нн

Vdc

нннннннннннн

Emitter-Base Voltage

ннн

ннннн

нн

Vdc

нннннннннннн

Collector Current - Continuous

ннн

ннннн

нн

Adc

нннннннннннн

Base Current

ннн

ннннн

нн

Adc

нннннннннннн

нннннннннн

нннннннннннн

Total Power Dissipation @ T

= 25

╟

Derate above 25

╟

ннн

ннннн

ннн

ннннн

115

0.657

нн

╟

нннннннннннн

нннннннннн

нннннннннннн

Operating and Storage Junction Tempera-
ture Range

ннн

, T

stg

ннннн

ннн

ннннн

ґ 65 to + 200

нн

╟

THERMAL CHARACTERISTICS

нннннннннннн

Characteristic

ннн

Symbol

ннннн

Max

нн

Unit

нннннннннннн

Thermal Resistance, Junction-to-Case

ннн

ннннн

1.52

нн

╟

C/W

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

160

100

125

150

175

200

Figure 1. Power Derating

, CASE TEMPERATURE (

╟

, POWER DISSIP

A
TION (W

A
TTS)

140

120

100

15 A

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 V

115 W

http://onsemi.com

Preferred devices are recommended choices for future use
and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

2N3055

TO-204AA

100 Units / Tray

MJ2955

TO-204AA

TO-204AA (TO-3)

CASE 1-07

100 Units / Tray

MARKING
DIAGRAM

xxxx55 = Device Code

xxxx= 2N3055 or MJ2955

= Assembly Location

= Year

= Work Week

= 1, 2, or 3

xxxx55

YYWW

2N3055G

TO-204AA

(Pb-Free)

1 Units / Tubes

2N3055H

TO-204AA

100 Units / Tray

For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

*For additional information on our Pb-Free strategy

and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

2N3055, MJ2955

http://onsemi.com

ELECTRICAL CHARACTERISTICS

= 25

╟

C unless otherwise noted)

нннннннннннннннннннннн

нннннннннннннннннннн

нннннннннннннннннннннн

Characteristic

ннннн

ннн

ннннн

Symbol

ннн

Min

нннн

нн

нннн

Max

ннн

Unit

*OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage (Note 1)
(I

= 200 mAdc, I

= 0)

CEO(sus)

Vdc

Collector-Emitter Sustaining Voltage (Note 1)
(I

= 200 mAdc, R

= 100

)

CER(sus)

Vdc

нннннннннннннннннннннн

нннннннннннннннннннн

нннннннннннннннннннннн

Collector Cutoff Current
(V

= 30 Vdc, I

= 0)

ннннн

ннн

ннннн

CEO

ннн

нннн

нн

нннн

0.7

ннн

mAdc

нннннннннннннннннннннн

нннннннннннннннннннн

нннннннннннннннннннннн

Collector Cutoff Current
(V

= 100 Vdc, V

BE(off)

= 1.5 Vdc)

= 100 Vdc, V

BE(off)

= 1.5 Vdc, T

= 150

╟

ннннн

ннн

ннннн

CEX

ннн

-
-

нннн

нн

нннн

1.0
5.0

ннн

mAdc

нннннннннннннннннннннн

нннннннннннннннннннн

нннннннннннннннннннннн

Emitter Cutoff Current
(V

= 7.0 Vdc, I

= 0)

ннннн

ннн

ннннн

EBO

ннн

нннн

нн

нннн

5.0

ннн

mAdc

ннннннннннннннннннннннннннннннннн

*ON CHARACTERISTICS (Note 1)

DC Current Gain
(I

= 4.0 Adc, V

= 4.0 Vdc)

= 10 Adc, V

= 4.0 Vdc)

5.0

Collector-Emitter Saturation Voltage
(I

= 4.0 Adc, I

= 400 mAdc)

= 10 Adc, I

= 3.3 Adc)

CE(sat)

1.1
3.0

Vdc

Base-Emitter On Voltage
(I

= 4.0 Adc, V

= 4.0 Vdc)

BE(on)

1.5

Vdc

ннннннннннннннннннннннннннннннннн

SECOND BREAKDOWN

нннннннннннннннннннннн

нннннннннннннннннннн

нннннннннннннннннннннн

Second Breakdown Collector Current with Base Forward Biased
(V

= 40 Vdc, t = 1.0 s, Nonrepetitive)

ннннн

ннн

ннннн

s/b

ннн

2.87

нннн

нн

нннн

ннн

Adc

ннннннннннннннннннннннннннннннннн

DYNAMIC CHARACTERISTICS

нннннннннннннннннннннн

нннннннннннннннннннн

нннннннннннннннннннннн

Current Gain - Bandwidth Product
(I

= 0.5 Adc, V

= 10 Vdc, f = 1.0 MHz)

ннннн

ннн

ннннн

ннн

2.5

нннн

нн

нннн

ннн

MHz

нннннннннннннннннннннн

нннннннннннннннннннн

нннннннннннннннннннннн

*Small-Signal Current Gain
(I

= 1.0 Adc, V

= 4.0 Vdc, f = 1.0 kHz)

ннннн

ннн

ннннн

ннн

нннн

нн

нннн

120

ннн

нннннннннннннннннннннн

*Small-Signal Current Gain Cutoff Frequency
(V

= 4.0 Vdc, I

= 1.0 Adc, f = 1.0 kHz)

ннннн

hfe

ннн

нннн

ннн

kHz

*Indicates Within JEDEC Registration. (2N3055)
1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

Figure 2. Active Region Safe Operating Area

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

6
4

0.6
0.4

0.2

I C

, COLLECT

OR CURRENT

(AMP)

500 ms

1 ms

250 ms

50 ms

BONDING WIRE LIMIT
THERMALLY LIMITED @ T

= 25

╟

C (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

There are two limitations on the power handling ability of

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

- V

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 2 is based on T

= 25

╟

C; T

J(pk)

variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated for temperature according to Figure 1.

2N3055, MJ2955

http://onsemi.com

V CE

, COLLECT

OR-EMITTER VOL

T
AGE (VOL

TS)

V CE

, COLLECT

OR-EMITTER VOL

T
AGE (VOL

TS)

500

0.1

Figure 3. DC Current Gain, 2N3055 (NPN)

, COLLECTOR CURRENT (AMP)

5.0

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0

100

30
20

200

h FE

, DC CURRENT

GAIN

= 150

╟

-55

╟

= 4.0 V

200

0.1

, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5 0.7 1.0

2.0 3.0

5.0

100

h FE

, DC CURRENT

GAIN

= 150

╟

-55

╟

= 4.0 V

7.0

300

7.0

Figure 4. DC Current Gain, MJ2955 (PNP)

2.0

5.0

, BASE CURRENT (mA)

100

200

500

1000 2000

5000

1.6

1.2

0.8

0.4

= 1.0 A

= 25

╟

4.0 A

8.0 A

2.0

, BASE CURRENT (mA)

1.6

1.2

0.8

0.4

1.4

0.1

, COLLECTOR CURRENT (AMPERES)

0.2 0.3

0.5 0.7 1.0

2.0

3.0

5.0

1.0

0.6

0.4

0.2

= 25

╟

BE(sat)

@ I

= 10

CE(sat)

@ I

= 10

V
,
VOL

T
AGE (VOL

TS)

Figure 5. Collector Saturation Region,

2N3055 (NPN)

1.2

0.8

7.0

@ V

= 4.0 V

2.0

0.1

, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5

1.0

2.0

3.0

5.0

1.2

0.4

= 25

╟

BE(sat)

@ I

= 10

CE(sat)

@ I

= 10

V
,
VOL

T
AGE (VOL

TS)

1.6

0.8

@ V

= 4.0 V

5.0

100

200

500

1000 2000

5000

= 1.0 A

= 25

╟

4.0 A

8.0 A

Figure 6. Collector Saturation Region,

MJ2955 (PNP)

Figure 7. "On" Voltages, 2N3055 (NPN)

Figure 8. "On" Voltages, MJ2955 (PNP)

2N3055, MJ2955

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

1.550 REF

39.37 REF

---

1.050

---

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

---

0.830

---

21.08

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

-T-

SEATING

PLANE

2 PL

0.13 (0.005)

-Q-

-Y-

TO-204 (TO-3)

CASE 1-07

ISSUE Z

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N3055/D

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Part Number MJ2955