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Part Number MAC15

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MAC15A4 (1) VIEW
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©
Semiconductor Components Industries, LLC, 1999
February, 2000 ­ Rev. 1
1
Publication Order Number:
MAC15A4/D
MAC15 Series
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
solid­state relays, motor controls, heating controls and power
supplies; or wherever full­wave silicon gate controlled solid­state
devices are needed. Triac type thyristors switch from a blocking to a
conducting state for either polarity of applied main terminal voltage
with positive or negative gate triggering.
·
Blocking Voltage to 800 Volts
·
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
·
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
·
Gate Triggering Guaranteed in Three Modes (MAC15 Series) or
Four Modes (MAC15A Series)
·
Device Marking: Logo, Device Type, e.g., MAC15A6, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off­State Voltage(1)
(TJ = ­40 to +125
°
C, Sine Wave 50 to
60 Hz, Gate Open)
MAC15A6
MAC15­8, MAC15A8
MAC15­10, MAC15A10
VDRM,
VRRM
400
600
800
Volts
Peak Gate Voltage
(Pulse Width
v
1.0
µ
sec; TC = 90
°
C)
VGM
10
Volts
On­State Current RMS
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90
°
C)
IT(RMS)
15
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
93
A2s
Peak Non­repetitive Surge Current
(One Full Cycle Sine Wave,
60 Hz, TC = +80
°
C)
Preceded and followed by rated current
ITSM
150
A
Peak Gate Power (TC = +80
°
C,
Pulse Width = 1.0
µ
s)
PGM
20
Watts
Average Gate Power
(TC = +80
°
C, t = 8.3 ms)
PG(AV)
0.5
Watts
Peak Gate Current
(Pulse Width
v
1.0
µ
sec; TC = 90
°
C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
­ 40 to
+125
°
C
Storage Temperature Range
Tstg
­ 40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MAC15­8
TO220AB
500/Box
MAC15­10
TO220AB
MAC15A6
TO220AB
TO­220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
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500/Box
500/Box
MT1
G
MT2
MAC15A8
TO220AB
500/Box
MAC15A10
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance -- Junction to Case
Thermal Resistance
-- Junction to Ambient
R
JC
R
JA
2.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Blocking Current
TJ = 25
°
C
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 125
°
C
IDRM,
IRRM
--
--
--
--
10
2.0
µ
A
mA
ON CHARACTERISTICS
Peak On­State Voltage(1) (ITM =
"
21 A Peak)
VTM
--
1.3
1.6
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(­)
MT2(­), G(­)
MT2(­), G(+) "A'' SUFFIX ONLY
IGT
--
--
--
--
--
--
--
--
50
50
50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(­)
MT2(­), G(­)
MT2(­), G(+) "A'' SUFFIX ONLY
VGT
--
--
--
--
0.9
0.9
1.1
1.4
2
2
2
2.5
Volts
Gate Non­Trigger Voltage
(VD = 12 V, RL = 100 Ohms, TJ = 110
°
C)
MT2(+), G(+); MT2(­), G(­); MT2(+), G(­)
MT2(­), G(+) "A'' SUFFIX ONLY
VGD
0.2
0.2
--
--
--
--
Volts
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current =
"
200 mA)
IH
--
6.0
40
mA
Turn-On Time
(VD = Rated VDRM, ITM = 17 A)
(IGT = 120 mA, Rise Time = 0.1
µ
s, Pulse Width = 2
µ
s)
tgt
--
1.5
--
µ
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80
°
C)
dv/dt(c)
--
5.0
--
V/
µ
s
(1) Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
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3
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 ­
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(­) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(­) MT2
REF
MT1
(­) IGT
GATE
(­) MT2
REF
­
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III
Quadrant IV
Quadrant II
Quadrant I
Quadrant Definitions for a Triac
IGT ­
+ IGT
All polarities are referenced to MT1.
With in­phase signals (using standard AC lines) quadrants I and III are used.
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4
Figure 1. RMS Current Derating
Figure 2. On­State Power Dissipation
Figure 3. Typical Gate Trigger Voltage
Figure 4. Typical Gate Trigger Current
130
120
110
100
90
80
0
2
4
6
8
10
12
14
16
IT(RMS), RMS ON­STATE CURRENT (AMP)
T
C
, CASE
TEMPERA
TURE
(
C
)
°
= 30
°
= 180
°
= 60
°
= 90
°
dc
TJ
125
°
20
16
12
8
4
0
0
2
4
6
8
10
12
14
16
IT(RMS), ON­STATE CURRENT (AMP)
30
°
= 180
°
dc
TJ
125
°
60
°
90
°
120
°
P
AV
,
A
VERAGE POWER (W
A
TTS)
= CONDUCTION ANGLE
= CONDUCTION ANGLE
1.8
1.6
1.4
1.2
1.0
0.4
­60
­40
­20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (
°
C)
1
QUADRANT 4
0.8
0.6
120
140
2
3
QUADRANTS
OFF­STATE VOLTAGE = 12 V
V
GT
, GA
TE
TRIGGER
VOL
T
AGE
(VOL
TS)
50
30
20
10
7.0
5.0
­60
­40
­20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (
°
C)
1
120
140
2
3
QUADRANT
OFF­STATE VOLTAGE = 12 V
4
I GT
, GA
TE
TRIGGER
CURRENT

(mA)
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5
100
70
50
30
20
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
vTM, INSTANTANEOUS ON­STATE VOLTAGE (VOLTS)
TJ = 25
°
C
4
4.4
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
i TM
, INST
ANT
ANEOUS
FOR
W
ARD
CURRENT

(AMP)
125
°
C
20
10
7.0
5.0
3.0
2.0
­60
­40
­20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (
°
C)
120
140
GATE OPEN
300
200
100
70
50
30
1
2
3
5
NUMBER OF CYCLES
7
10
Surge is preceded and followed by rated current
MAIN TERMINAL #1
POSITIVE
MAIN TERMINAL #2
POSITIVE
TC = 80
°
C
T
f = 60 Hz
T SM
, PEAK SURGE CURRENT
(AMP)
I H
, HOLDING CURRENT

(mA)
Figure 5. On­State Characteristics
Figure 6. Typical Holding Current
Figure 7. Maximum Non­Repetitive
Surge Current
1
0.5
0.1
0.05
0.02
0.01
0.1
0.2
0.5
t, TIME (ms)
1
Z
JC(t) = r(t)
·
R
JC
0.2
2
5
10
20
50
100
200
500
1 k
2 k
5 k
10 k
r(t) TRANSIENT

THERMAL

RESIST
ANCE
(NORMALIZED)
Figure 8. Thermal Response
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6
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
TO­220AB
CASE 221A­07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.014
0.022
0.36
0.55
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
­­­
1.15
­­­
Z
­­­
0.080
­­­
2.04
A
K
L
V
G
D
N
Z
H
Q
F
B
1
2
3
4
­T­
SEATING
PLANE
S
R
J
U
T
C
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7
Notes
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8
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MAC15A4/D
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