Semiconductor Components Industries, LLC, 2002

April, 2002 Rev. 10

Publication Order Number:

BD676/D

BD676, BD676A, BD678,

BD678A, BD680, BD680A,

BD682

Plastic Medium-Power

Silicon PNP Darlingtons

...for use as output devices in complementary generalpurpose

amplifier applications.

High DC Current Gain

hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc

Monolithic Construction

BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with

BD675, 675A, 677, 677A, 679, 679A, 681

BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BD676, BD676A
BD678, BD678A
BD680, BD680A

BD682

VCEO

45
60
80

100

Vdc

Collector-Base Voltage

BD676, BD676A
BD678, BD678A
BD680, BD680A

BD682

VCB

45
60
80

100

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current

4.0

Adc

Base Current

0.1

Adc

Total Device Dissipation

@ TC = 25

Derate above 25

0.32

Operating and Storage Junction

Temperature Range

TJ, Tstg

55 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance

Junction to Case

3.13

C/W

TO225AA

CASE 77

STYLE 1

MARKING DIAGRAM

= Year

= Work Week

BD6xxx = Specific Device Code
xxx

= 76, 76A, 78, 78A, 80, 80A or 82

Device

Package

Shipping

ORDERING INFORMATION

BD676

TO225AA

500 Units/Box

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

PNP SILICON

45, 60, 80, 100 VOLTS

40 WATTS

BD676A

TO225AA

500 Units/Box

BD678

TO225AA

500 Units/Box

BD678A

TO225AA

500 Units/Box

BD680

TO225AA

500 Units/Box

BD680A

TO225AA

500 Units/Box

BD682

TO225AA

500 Units/Box

YWW
BD6xxx

2 1

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

http://onsemi.com

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CollectorEmitter Breakdown Voltage (Note 1)

BD676, 676A

(IC = 50 mAdc, IB = 0)

BD678, 678A
BD680, 680A
BD682

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

BVCEO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

45
60
80

100

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

500

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ICBO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

0.2
2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

BD676, 678, 680, 682

(IC = 2.0 Adc, VCE = 3.0 Vdc)

BD676A, 678A, 680A

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

750
750

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CollectorEmitter Saturation Voltage (Note 1)

(IC = 1.5 Adc, IB = 30 mAdc)

BD678, 680, 682

(IC = 2.0 Adc, IB = 40 mAdc)

BD676A, 678A, 680A

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.5
2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

BaseEmitter On Voltage (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc)

BD678, 680, 682

(IC = 2.0 Adc, VCE = 3.0 Vdc)

BD676A, 678A, 680A

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.5
2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SmallSignal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

1.0

ÎÎÎÎ

ÎÎÎ

1. Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

5.0

105

135 150 165

Figure 1. Power Temperature Derating

TC, CASE TEMPERATURE (

P D

, POWER DISSIP

A
TION (W

A
TTS)

120

20
15

30
25

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682

http://onsemi.com

Figure 2. DC Safe Operating Area

5.0

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

2.0

1.0

0.5

0.05

2.0

5.0

100

BONDING WIRE LIMIT

THERMAL LIMIT at TC = 25

SECONDARY BREAKDOWN LIMIT

0.2

0.1

I C

, COLLECT

OR CURRENT

(AMP)

TC = 25

BD676, 676A

BD678, 678A

BD680, 680A

BD682

There are two limitations on the power handling ability of

a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the
limitations imposed by secondary breakdown.

Figure 3. Darlington Circuit Schematic

BASE

PNP

BD676, 676A

BD678, 678A

BD680, 680A

BD682

COLLECTOR

EMITTER

[ 8.0 k

[ 120

BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682

http://onsemi.com

PACKAGE DIMENSIONS

TO126

TO225AA

CASE 7709

ISSUE W

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

B

A

2 PL

0.25 (0.010)

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.425

0.435

10.80

11.04

0.295

0.305

7.50

7.74

0.095

0.105

2.42

2.66

0.020

0.026

0.51

0.66

0.115

0.130

2.93

3.30

0.094 BSC

2.39 BSC

0.050

0.095

1.27

2.41

0.015

0.025

0.39

0.63

0.575

0.655

14.61

16.63

5 TYP

0.148

0.158

3.76

4.01

0.045

0.065

1.15

1.65

0.025

0.035

0.64

0.88

0.145

0.155

3.69

3.93

0.040

---

1.02

---

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local
Sales Representative.

BD676/D

Literature Fulfillment:

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Part Number BD676