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Part Number BAS16DXV6T5

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©
Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 0
1
Publication Order Number:
BAS16DXV6T1/D
BAS16DXV6T1,
BAS16DXV6T5
Preferred Device
Dual Switching Diode
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
V
R
75
V
Recurrent Peak Forward Current
I
F
200
mA
Peak Forward Surge Current
Pulse Width = 10
m
s
I
FM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/
°
C
Thermal Resistance Junction-to-Ambient
R
q
JA
350
(Note 1)
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/
°
C
Thermal Resistance Junction-to-Ambient
R
q
JA
250
(Note 1)
°
C/W
Junction and Storage Temperature
T
J
, T
stg
- 55 to
+150
°
C
1. FR-4 @ Minimum Pad
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
6
1
SOT-563
CASE 463A
PLASTIC
1
2
3
6
5 4
A6 = Specific Device Code
D
= Date Code
MARKING DIAGRAM
A6 D
Device
Package
Shipping
ORDERING INFORMATION
BAS16DXV6T1
SOT-563
4 mm pitch
4000/Tape & Reel
BAS16DXV6T5
SOT-563
2 mm pitch
8000/Tape & Reel
3
4
BAS16DXV6T1, BAS16DXV6T5
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
-
-
-
-
715
866
1000
1250
mV
Reverse Current
(V
R
= 75 V)
(V
R
= 75 V, T
J
= 150
°
C)
(V
R
= 25 V, T
J
= 150
°
C)
I
R
-
-
-
1.0
50
30
m
A
Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
-
2.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 50
W
) (Figure 1)
t
rr
-
6.0
ns
Stored Charge
(I
F
= 10 mA to V
R
= 6.0 V, R
L
= 500
W
) (Figure 2)
QS
-
45
PC
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns) (Figure 3)
V
FR
-
1.75
V
BAS16DXV6T1, BAS16DXV6T5
http://onsemi.com
3
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
V
F
1 ns MAX
90%
10%
t
100 ns
t
if
t
rr
I
rr
500 W
DUT
50 W
DUTY CYCLE = 2%
V
f
90%
10%
20 ns MAX
t
400 ns
V
C
V
CM
t
VCM + Qa
C
500 W DUT
BAW62
D1
243 pF
100 KW
DUTY CYCLE = 2%
V
120 ns
t
2 ns MAX
10%
90%
V
V
fr
1 KW
450 W
50 W
DUT
DUTY CYCLE = 2%
OSCILLOSCOPE
R
.
10 M
W
C
3
7 pF
BAS16DXV6T1, BAS16DXV6T5
http://onsemi.com
4
100
0.2
0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6
0.8
1.0
1.2
10
1.0
0.1
T
A
= 85
°
C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10
20
30
40
50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C D
, DIODE CAP
ACIT
ANCE (pF)
2
4
6
8
I F
, FOR
W
ARD CURRENT
(mA)
Figure 4. Forward Voltage
Figure 5. Leakage Current
Figure 6. Capacitance
T
A
= -40
°
C
T
A
= 25
°
C
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 55
°
C
T
A
= 25
°
C
I R
, REVERSE CURRENT
(
µ
A)
Figure 7. Normalized Thermal Response
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED
TRANSIENT

THERMAL
RESIST
ANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
BAS16DXV6T1, BAS16DXV6T5
http://onsemi.com
5
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25
°
C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the to-
tal design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the cor-
rect pad geometry, the packages will self align when sub-
jected to a solder reflow process.
SOT-563 POWER DISSIPATION
P
D
=
T
J(max)
- T
A
R
q
JA
P
D
=
150
°
C - 25
°
C
833
°
C/W
= 150 milliwatts
The power dissipation of the SOT-563 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined by T
J(max)
, the maximum rated junction temperature
of the die, R
qJA
, the thermal resistance from the device
junction to ambient, and the operating temperature, T
A
. Us-
ing the values provided on the data sheet for the SOT-563
package, P
D
can be calculated as follows:
The 833
°
C/W for the SOT-563 package assumes the use
of the recommended footprint on a glass epoxy printed cir-
cuit board to achieve a power dissipation of 150 milliwatts.
There are other alternatives to achieving higher power dis-
sipation from the SOT-563 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad
®
. Using a board material such
as Thermal Clad, an aluminum core board, the power dis-
sipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in or-
der to minimize the thermal stress to which the devices are
subjected.
·
Always preheat the device.
·
The delta temperature between the preheat and solder-
ing should be 100
°
C or less.*
·
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum tem-
perature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering meth-
od, the difference shall be a maximum of 10
°
C.
·
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
·
When shifting from preheating to soldering, the maxi-
mum temperature gradient shall be 5
°
C or less.
·
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
·
Mechanical stress or shock should not be applied dur-
ing cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
1.35
0.0531
0.5
0.0197
mm
inches
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
SOT-563
BAS16DXV6T1, BAS16DXV6T5
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT-563, 6 LEAD
CASE 463A-01
ISSUE O
G
M
0.08 (0.003)
X
D
6
5 PL
C
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
MIN
MAX
MIN
MAX
INCHES
1.50
1.70
0.059
0.067
MILLIMETERS
B
1.10
1.30
0.043
0.051
C
0.50
0.60
0.020
0.024
D
0.17
0.27
0.007
0.011
G
0.50 BSC
0.020 BSC
J
0.08
0.18
0.003
0.007
K
S
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
A
B
Y
1
2
3
4
5
S
K
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
0.004
0.012
0.059
0.067
0.10
0.30
1.50
1.70
6
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BAS16DXV6T1/D
Thermal Clad is a trademark of the Bergquist Company.
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