Darlington Silicon
Power Transistors
. . . designed for generalpurpose amplifier and low speed
switching applications.
·
High DC Current Gain --
hFE = 3500 (Typ) @ IC = 4 Adc
·
CollectorEmitter Sustaining Voltage -- @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) -- 2N6667
= 80 Vdc (Min) -- 2N6668
·
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc
·
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
·
TO220AB Compact Package
·
Complementary to 2N6387, 2N6388
COLLECTOR
EMITTER
[ 8 k
[ 120
Figure 1. Darlington Schematic
BASE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎ
ÎÎÎÎÎ
2N6667
ÎÎÎÎÎ
ÎÎÎÎÎ
2N6668
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎ
ÎÎÎÎÎ
60
ÎÎÎÎÎ
ÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorBase Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCB
ÎÎÎÎÎ
ÎÎÎÎÎ
60
ÎÎÎÎÎ
ÎÎÎÎÎ
80
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
EmitterBase Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current -- Continuous
-- Peak
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IC
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
10
15
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
250
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
ÎÎÎÎÎ
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
65
0.52
ÎÎÎ
ÎÎÎ
watts
W/
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TA = 25
_
C
Derate above 25
_
C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
2
0.016
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎ
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
65 to +150
ÎÎÎ
ÎÎÎ
_
C
(1) Indicates JEDEC Registered Data.
ON Semiconductor
)
©
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 4
1
Publication Order Number:
2N6667/D
2N6667
2N6668
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 AMPERES
6080 VOLTS
65 WATTS
CASE 221A09
TO220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
2N6667 2N6668
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
R
JC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.92
ÎÎÎ
ÎÎÎ
_
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎ
ÎÎÎÎÎ
R
JA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
62.5
ÎÎÎ
ÎÎÎ
_
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (2)
2N6667
(IC = 200 mAdc, IB = 0)
2N6668
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
60
80
ÎÎÎÎ
ÎÎÎÎ
--
--
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
2N6667
(VCE = 80 Vdc, IB = 0)
2N6668
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
ÎÎÎ
--
--
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1
1
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6668
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125
_
C)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125
_
C)
2N6668
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
--
--
--
--
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
300
300
3
3
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
µ
Adc
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
--
ÎÎÎÎ
ÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (IC = 5 Adc, VCE = 3 Vdc)
(IC = 10 Adc, VCE = 3 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
ÎÎÎ
1000
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
20000
--
ÎÎÎ
Î
Î
Î
ÎÎÎ
--
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
--
--
ÎÎÎÎ
ÎÎÎÎ
2
3
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BaseEmitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
--
--
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.8
4.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain -- Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
|hfe|
ÎÎÎ
ÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
--
ÎÎÎ
ÎÎÎ
--
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
--
ÎÎÎÎ
ÎÎÎÎ
200
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SmallSignal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
1000
ÎÎÎÎ
ÎÎÎÎ
--
ÎÎÎ
ÎÎÎ
--
*Indicates JEDEC Registered Data
(2) Pulse Test: Pulse Width
v
300
µ
s, Duty Cycle
v
2%.
Figure 2. Switching Times Test Circuit
0
VCC
- 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
µ
s
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8 V
V1
APPROX
- 12 V
[ 8 k
[ 120
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0
RB
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3
t, TIME
(s)
µ
80
40
20
0
20
40
80
100
120
160
Figure 3. Power Derating
T, TEMPERATURE (
°
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
60
TA TC
4
2
1
3
0
60
140
TA
TC
0.1
Figure 4. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
5
0.7
0.3
0.2
0.2
10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
°
C
tf
1
5
ts
tr
0.1
1
3
0.5
2
.td
0.5
2
7
0.3
0.7
3
7
10
Figure 5. Thermal Response
t, TIME (ms)
1
0.01
0.01
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.02
r(t) NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
1000
500
Z
JC(t) = r(t) R
JC
R
JC = 1.92
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.05
0.1
0.02
0.01
0.2
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
°
C
SECOND BREAKDOWN LIMIT
20
1
Figure 6. Maximum Safe Operating Area
2
0.02
10
20
100
TJ = 150
°
C
0.2
5
0.5
I C
, COLLECT
OR CURRENT
(AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
50
1
0.1
dc
2
70
3
7
2N6667
2N6668
CURVES APPLY BELOW RATED VCEO
1 ms
100
µ
s
5 ms
3
0.03
0.05
0.3
5
30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
2N6667 2N6668
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4
10,000
1
Figure 7. Typical SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2
5
10
20
50
100 200
1000
500
100
5000
h FE
, SMALL-SIGNAL
CURENT
GAIN
20
200
500
2000
1000
50
TC = 25
°
C
VCE = 4 VOLTS
IC = 3 AMPS
300
0.1
Figure 8. Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1
2
5
20
100
10
C, CAP
ACIT
ANCE (pF)
200
100
70
50
Cib
Cob
50
0.2
0.5
TJ = 25
°
C
3
7
70
30
300
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.1
Figure 9. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.2 0.3
0.5 0.7 1
2
10
500
300
h FE
, DC CURRENT
GAIN
TJ = 150
°
C
VCE = 3 V
200
7
20,000
5000
10,000
3000
2000
1000
3
5
Figure 10. Typical Collector Saturation Region
2.6
IB, BASE CURRENT (mA)
0.3
0.5
1
2
3
5
7
30
2.2
1.8
1.4
1
IC = 2 A
TJ = 25
°
C
4 A
6 A
0.6
0.7
20
10
TJ = - 55
°
C
7000
700
TJ = 25
°
C
IC, COLLECTOR CURRENT (AMPS)
VBE(sat) @ IC/IB = 250
V
,
VOL
T
AGE (VOL
TS)
Figure 11. Typical "On" Voltages
VCE(sat) @ IC/IB = 250
TJ = 25
°
C
VBE @ VCE = 3 V
0.1
0.2 0.3
0.5 0.7
1
2
10
7
3
5
3
2
1.5
1
0.5
Figure 12. Typical Temperature Coefficients
+3
+2
0
-1
-2
-3
+5
+4
+1
2.5
0.1
0.2 0.3
0.5 0.7
1
2
10
7
3
5
IC, COLLECTOR CURRENT (AMP)
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
°
-55
°
C to 25
°
C
25
°
C to 150
°
C
-55
°
C to 25
°
C
25
°
C to 150
°
C
VB for VBE
-4
-5
VC for VCE(sat)
hFE @ VCE + 3.0 V
3
*IC/IB
2N6667 2N6668
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5
105
Figure 13. Typical Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECT
OR CURRENT
(A)
µ
I C
10-1
VCE = 30 V
TJ = 150
°
C
100
°
C
25
°
C
REVERSE
FORWARD
103
104
+0.2
+0.4
0 -0.2 -0.4 -0.6 -0.8
-1.2 -1.4
-1
+0.6
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6
PACKAGE DIMENSIONS
CASE 221A09
ISSUE AA
TO220
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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Notes
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Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 8002829855 Toll Free USA/Canada
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