High Voltage Transistors
MAXIMUM RATINGS
Rating
Symbol
2N6515
2N6517
2N6520
Unit
CollectorEmitter Voltage
VCEO
250
350
Vdc
CollectorBase Voltage
VCBO
250
350
Vdc
EmitterBase Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
VEBO
6.0
5.0
Vdc
Base Current
IB
250
mAdc
Collector Current
Continuous
IC
500
mAdc
Total Device Dissipation
@ TA = 25
°
C
Derate above 25
°
C
PD
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage
Junction
Temperature Range
TJ, Tstg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
°
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6517, 2N6520
V(BR)CEO
250
350
Vdc
CollectorBase Breakdown Voltage
(IC = 100
µ
Adc, IE = 0 )
2N6515
2N6517, 2N6520
V(BR)CBO
250
350
Vdc
EmitterBase Breakdown Voltage
(IE = 10
µ
Adc, IC = 0)
2N6515, 2N6517
2N6520
V(BR)EBO
6.0
5.0
Vdc
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
ON Semiconductort
©
Semiconductor Components Industries, LLC, 2001
October, 2001 Rev. 3
1
Publication Order Number:
2N6515/D
NPN
2N6515
2N6517
PNP
2N6520
CASE 2904, STYLE 1
TO92 (TO226AA)
1
2
3
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
NPN 2N6515 2N6517 PNP 2N6520
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2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(Continued)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
2N6515
(VCB = 250 Vdc, IE = 0)
2N6517, 2N6520
ICBO
50
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0)
2N6520
IEBO
50
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
hFE
35
20
50
30
50
30
45
20
25
15
300
200
220
200
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.30
0.35
0.50
1.0
Vdc
BaseEmitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat)
0.75
0.85
0.90
Vdc
BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
fT
40
200
MHz
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
6.0
pF
EmitterBase Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N6515, 2N6517
2N6520
Ceb
80
100
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
ton
200
µ
s
TurnOff Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
toff
3.5
µ
s
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
NPN 2N6515 2N6517 PNP 2N6520
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3
Figure 1. DC Current Gain NPN 2N6515
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70
h FE
, DC CURRENT GAIN
200
100
20
30
50
70
VCE = 10 V
TJ = 125
°
C
25
°
C
-55
°
C
Figure 2. DC Current Gain NPN 2N6517
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70
200
100
10
20
50
70
VCE = 10 V
TJ = 125
°
C
25
°
C
-55
°
C
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
-50 -70
VCE = -10 V
TJ = 125
°
C
25
°
C
-55
°
C
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
20
30
50
70
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
-50 -70
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) T
f, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) T
h FE
, DC CURRENT GAIN
h FE
, DC CURRENT GAIN
10
100
20
30
50
70
10
TJ = 25
°
C
VCE = 20 V
f = 20 MHz
TJ = 25
°
C
VCE = -20 V
f = 20 MHz
30
200
100
10
20
50
70
30
Figure 3. DC Current Gain PNP 2N6520
Figure 4. CurrentGain Bandwidth Product NPN
2N6515, 2N6517
Figure 5. CurrentGain Bandwidth Product PNP
2N6520
NPN 2N6515 2N6517 PNP 2N6520
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4
Figure 6. "On" Voltages NPN 2N6515, 2N6517
Figure 7. "On" Voltages PNP 2N6520
Figure 8. Temperature Coefficients NPN 2N6515,
2N6517
Figure 9. Temperature Coefficients PNP 2N6520
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
V
,
VOL
T
AGE (VOL
TS)
1.4
1.2
0
0.6
0.8
1.0
NPN
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70
2.5
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30 -50 -70
Figure 10. Capacitance NPN 2N6515, 2N6517
VR, REVERSE VOLTAGE (VOLTS)
200
0.2
0.5
1.0
2.0
5.0
10
20
50 100
100
2.0
3.0
5.0
70
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
1.0
V
,
VOL
T
AGE (VOL
TS)
0.4
0.2
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
-1.4
-1.2
0
-0.6
-0.8
-1.0
-0.4
-0.2
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
R
V, TEMPERA
TURE COEFFICIENTS (mV/
C)
°
R
V, TEMPERA
TURE COEFFICIENTS (mV/
C)
°
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
R
VC for VCE(sat)
R
VB for VBE
25
°
C to 125
°
C
-55
°
C to 25
°
C
-55
°
C to 125
°
C
IC
IB
+ 10
R
VC for VCE(sat)
R
VB for VBE
25
°
C to 125
°
C
-55
°
C to 25
°
C
-55
°
C to 125
°
C
IC
IB
+ 10
C, CAP
ACIT
ANCE (pF)
7.0
10
20
30
50
-200
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
TJ = 25
°
C
TJ = 25
°
C
Ccb
Ceb
Ccb
Ceb
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
100
2.0
3.0
5.0
70
1.0
7.0
10
20
30
50
Figure 11. Capacitance PNP 2N6520
NPN 2N6515 2N6517 PNP 2N6520
http://onsemi.com
5
Figure 12. TurnOn Time NPN 2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70
t, TIME (ns)
1.0 k
20
10
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
-50 -70
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70
IC, COLLECTOR CURRENT (mA)
-100
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70
30
50
70
100
200
300
500
700
t, TIME (ns)
td @ VBE(off) = 2.0 V
tr
VCE(off) = 100 V
IC/IB = 5.0
TJ = 25
°
C
td @ VBE(off) = 2.0 V
tr
VCE(off) = -100 V
IC/IB = 5.0
TJ = 25
°
C
t, TIME (ns)
10 k
100
200
300
500
700
1.0 k
2.0 k
3.0 k
5.0 k
7.0 k
20
30
50
70
100
200
300
500
700
1.0 k
2.0 k
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25
°
C
VCE(off) = -100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25
°
C
ts
tf
ts
tf
1.0 k
20
10
30
50
70
100
200
300
500
700
Figure 13. TurnOn Time PNP 2N6520
Figure 14. TurnOff Time NPN 2N6515, 2N6517
Figure 15. TurnOff Time PNP 2N6520
NPN 2N6515 2N6517 PNP 2N6520
http://onsemi.com
6
Figure 16. Switching Time Test Circuit
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
r(t)
, TRANSIENT THERMAL
RESIST
ANCE (NORMALIZED)
10 k
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
t, TIME (ms)
Figure 17. Thermal Response
500
200
100
50
20
10
5.0
2.0
1.0
0.5
I C
, COLLECTOR CURRENT (mA)
0.5 1.0
2.0
5.0
10
20
50 100 200
500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 18. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE + t1 f +
t1
tP
PEAK PULSE POWER = PP
TA = 25
°
C
1.0 ms
10
µ
s
TC = 25
°
C
100
µ
s
100 ms
+10.8 V
-9.2 V
+VCC
2.2 k
20 k
50
50
SAMPLING SCOPE
1/2MSD7000
1.0 k
VCC ADJUSTED
FOR VCE(off) = 100 V
APPROXIMATELY
-1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
PULSE WIDTH
100
µ
s
tr, tf
5.0 ns
DUTY CYCLE
1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
Z
JC(t) = r(t)
·
R
JC TJ(pk) - TC = P(pk) Z
JC(t)
Z
JA(t) = r(t)
·
R
JA TJ(pk) - TA = P(pk) Z
JA(t)
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25
°
C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED VCEO
2N6515
2N6517, 2N6520
NPN 2N6515 2N6517 PNP 2N6520
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7
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 02904
(TO226AA)
ISSUE AD
NPN 2N6515 2N6517 PNP 2N6520
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8
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2N6515/D
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