ChipFind - Datasheet

Part Number 2N3819

Download:  PDF   ZIP
©
Semiconductor Components Industries, LLC, 2002
March, 2002 ­ Rev. 0
1
Publication Order Number:
2N3819/D
2N3819
JFET VHF/UHF Amplifier
N­Channel ­ Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain­Source Voltage
V
DS
25
Vdc
Drain­Gate Voltage
V
DG
25
Vdc
Gate­Source Voltage
V
GS
25
Vdc
Drain Current
I
D
100
mAdc
Forward Gate Current
I
G(f)
10
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
350
2.8
mW
mW/
°
C
Storage Channel Temperature Range
T
stg
­65 to +150
°
C
Device
Package
Shipping
ORDERING INFORMATION
2N3819
TO­92
TO­92
CASE 29
STYLE 22
5000 Units/Box
3
2
1
2N3819 = Device Code
Y
= Year
WW
= Work Week
MARKING DIAGRAM
2N
3819
YWW
http://onsemi.com
3 DRAIN
1 SOURCE
2
GATE
2N3819
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate­Source Breakdown Voltage
(I
G
= 1.0
µ
Adc, V
DS
= 0)
V
(BR)GSS
25
­
­
Vdc
Gate­Source
(V
DS
= 15 Vdc, I
D
= 200
µ
Adc)
V
GS
0.5
­
7.5
Vdc
Gate­Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
V
GS(off)
­
­
­8.0
Vdc
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
I
GSS
­
­
210
nAdc
ON CHARACTERISTICS
Zero­Gate­Voltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0)
I
DSS
2.0
­
20
mAdc
SMALL­SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Y
fs
3.0
­
6.5
mmhos
Output Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
Y
os
­
40
­
m
mhos
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz)
Y
fs
­
5.6
­
mmhos
Reverse Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 200 MHz)
Y
rs
­
1.0
­
mmhos
Input Capacitance
(V
DS
= 20 Vdc, ­V
GS
= 1.0 Vdc)
C
iss
­
3.0
­
pF
Reverse Transfer Capacitance
(V
DS
= 20 Vdc, ­V
GS
= 1.0 Vdc, f = 1.0 MHz)
C
rss
­
0.7
­
pF
Output Capacitance
(V
DS
= 20 Vdc, ­V
GS
= 1.0 Vdc, f = 1.0 MHz)
C
oss
­
0.9
­
pF
Cut­off Frequency (Note 1)
(V
DS
= 15 Vdc, V
GS
= 0)
F
(Yfs)
­
700
­
MHz
1. The frequency at which g
fs
is 0.7 of its value at 1 kHz.
2N3819
http://onsemi.com
3
f, FREQUENCY (MHz)
30
10
b
is
@ I
DSS
f, FREQUENCY (MHz)
5.0
Figure 1. Input Admittance (y
is
)
Figure 2. Reverse Transfer Admittance (y
rs
)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25
°
C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 3. Forward Transadmittance (y
fs
)
Figure 4. Output Admittance (y
os
)
g is
, INPUT
CONDUCT
ANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20
30
50 70 100
200 300
500 700 1000
b is
, INPUT
SUSCEPT
ANCE (mmhos)
g fs
, FOR
W
ARD
TRANSCONDUCT
ANCE (mmhos)
|b
fs|, FOR
W
ARD SUSCEPT
ANCE (mmhos)
g rs
, REVERSE
TRANSADMITT
ANCE (mmhos)
b rs
, REVERSE SUSCEPT
ANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g os
, OUTPUT

ADMITT
ANCE (mhos)
b os
, OUTPUT
SUSCEPT
ANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10
20
30
50 70 100
200 300
500 700 1000
10
20
30
50 70 100
200 300
500 700 1000
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20 30
50 70 100
200 300
500 7001000
b
is
@ 0.25 I
DSS
g
is
@ I
DSS
g
is
@ 0.25 I
DSS
b
rs
@ I
DSS
0.25 I
DSS
g
rs
@ I
DSS
, 0.25 I
DSS
g
fs
@ I
DSS
|b
fs
| @ I
DSS
|b
fs
| @ 0.25 I
DSS
b
os
@ I
DSS
and 0.25 I
DSS
g
os
@ I
DSS
g
os
@ 0.25 I
DSS
g
fs
@ 0.25 I
DSS
2N3819
http://onsemi.com
4
Figure 5. S
11s
Figure 6. S
12s
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
32
31
30
29
28
27
26
25
24
23
22
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
32
31
30
29
28
27
26
25
24
23
22
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900
900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
600
700
800
900
500
I
D
= I
DSS
, 0.25 I
DSS
900
500
800
700
600
500
400
300 200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100
I
D
= 0.25 I
DSS
I
D
= I
DSS
900
100
500
700
300
400
500
600
700
800
Figure 7. S
21s
Figure 8. S
22s
COMMON SOURCE CHARACTERISTICS
S­PARAMETERS
(V
DS
= 15 Vdc, T
channel
= 25
°
C, Data Points in MHz)
2N3819
http://onsemi.com
5
f, FREQUENCY (MHz)
10
g
ig
@ I
DSS
f, FREQUENCY (MHz)
0.5
Figure 9. Input Admittance (y
ig
)
Figure 10. Reverse Transfer Admittance (y
rg
)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(V
DG
= 15 Vdc, T
channel
= 25
°
C)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (y
fg
)
Figure 12. Output Admittance (y
og
)
g ig
, INPUT
CONDUCT
ANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30
50 70 100
200 300
500 700 1000
b ig
, INPUT
SUSCEPT
ANCE (mmhos)
g fg
, FOR
W
ARD
TRANSCONDUCT
ANCE (mmhos)
b fg
, FOR
W
ARD SUSCEPT
ANCE (mmhos)
g rg
, REVERSE
TRANSADMITT
ANCE (mmhos)
b rg
, REVERSE SUSCEPT
ANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
g og
, OUTPUT

ADMITT
ANCE (mmhos)
b og
, OUTPUT
SUSCEPT
ANCE (mmhos)
0.3
0.01
0.1
0.2
10
20
30
50 70 100
200 300
500 700 1000
10
20 30
50 70 100
200 300
500 700 1000
0.01
0.02
0.03
0.3
10
20
30
50 70 100
200 300
500 700 1000
b
ig
@ 0.25 I
DSS
b
ig
@ I
DSS
g
rg
@ 0.25 I
DSS
g
fg
@ I
DSS
g
fg
@ 0.25 I
DSS
b
rg
@ 0.25 I
DSS
b
og
@ I
DSS
, 0.25 I
DSS
g
og
@ I
DSS
g
og
@ 0.25 I
DSS
0.2
0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
b
rg
@ I
DSS
0.25 I
DSS
g
ig
@ I
DSS
, 0.25 I
DSS
b
fg
@ I
DSS