ChipFind - Datasheet

Part Number 1SMB5.0AT3

Download:  PDF   ZIP
©
Semiconductor Components Industries, LLC, 2004
May, 2004 - Rev. 7
1
Publication Order Number:
1SMB5.0AT3/D
1SMB5.0AT3 Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor's exclusive, cost-effective, highly reliable
Surmetic
TM
package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features
·
Working Peak Reverse Voltage Range - 5.0 V to 170 V
·
Standard Zener Breakdown Voltage Range - 6.7 V to 199 V
·
Peak Power - 600 W @ 1.0 ms
·
ESD Rating of Class 3 (>16 kV) per Human Body Model
·
Maximum Clamp Voltage @ Peak Pulse Current
·
Low Leakage < 5.0
mA Above 10 V
·
UL 497B for Isolated Loop Circuit Protection
·
Response Time is Typically < 1.0 ns
·
Pb-Free Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°
C for 10 Seconds
LEADS:
Modified L-Bend providing more contact area to bond pads
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
*Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 V - 170 V,
600 W PEAK POWER
Individual devices are listed on page 3 of this data sheet.
Device
Package
Shipping
ORDERING INFORMATION
1SMBxxxAT3
SMB
2500/Tape & Reel
SMB
CASE 403A
PLASTIC
Cathode
Anode
Y
= Year
WW
= Work Week
xx
= Specific Device Code
=
(See Table Page 3)
YWW
xx
MARKING DIAGRAM
http://onsemi.com
1SMBxxxAT3G
SMB
(Pb-Free)
2500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Uni-Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1SMB5.0AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
600
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2)
Derate Above 75
°
C
Thermal Resistance from Junction-to-Lead
P
D
R
q
JL
3.0
40
25
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from Junction-to-Ambient
P
D
R
q
JA
0.55
4.4
226
W
mW/
°
C
°
C/W
Forward Surge Current (Note 4) @ T
A
= 25
°
C
I
FSM
100
A
Operating and Storage Temperature Range
T
J
, T
stg
-65 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000
m
s, non-repetitive
2. 1
square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 30 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non-repetitive duty cycle.
1SMB5.0AT3 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(Devices listed in
bold, italic are ON Semiconductor Preferred devices.)
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 8)
Device
V
RWM
(Note 6)
I
R
@ V
RWM
V
BR
(Note 7)
Volts
@ I
T
V
C
I
PP
Device
Device
Marking
Volts
m
A
Min
Nom
Max
mA
Volts
Amps
1SMB5.0AT3
1SMB6.0AT3, G*
1SMB6.5AT3
1SMB7.0AT3
KE
KG
KK
KM
5.0
6.0
6.5
7.0
800
800
500
500
6.40
6.67
7.22
7.78
6.7
7.02
7.6
8.19
7.0
7.37
7.98
8.6
10
10
10
10
9.2
10.3
11.2
12.0
65.2
58.3
53.6
50.0
1SMB7.5AT3
1SMB8.0AT3
1SMB8.5AT3
1SMB9.0AT3
KP
KR
KT
KV
7.5
8.0
8.5
9.0
100
50
10
5.0
8.33
8.89
9.44
10.0
8.77
9.36
9.92
10.55
9.21
9.83
10.4
11.1
1.0
1.0
1.0
1.0
12.9
13.6
14.4
15.4
46.5
44.1
41.7
39.0
1SMB10AT3
1SMB11AT3
1SMB12AT3
1SMB13AT3
KX
KZ
LE
LG
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.7
12.85
14
15.15
12.3
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
1SMB14AT3
1SMB15AT3, G*
1SMB16AT3
1SMB17AT3
LK
LM
LP
LR
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.4
17.6
18.75
19.9
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
1SMB18AT3
1SMB20AT3
1SMB22AT3
1SMB24AT3, G*
LT
LV
LX
LZ
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
1SMB26AT3
1SMB28AT3, G*
1SMB30AT3, G*
1SMB33AT3, G*
ME
MG
MK
MM
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
1SMB36AT3
1SMB40AT3
1SMB43AT3
1SMB45AT3
MP
MR
MT
MV
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.1
46.75
50.3
52.65
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.7
10.3
9.3
8.6
8.3
1SMB48AT3
1SMB51AT3
1SMB54AT3
1SMB58AT3
MX
MZ
NE
NG
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.2
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
1SMB60AT3
1SMB64AT3
1SMB70AT3
1SMB75AT3
NK
NM
NP
NR
60
64
70
75
5.0
5.0
5.0
5.0
66.7
71.1
77.8
83.3
70.2
74.85
81.9
87.7
73.7
78.6
86
92.1
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
1SMB85AT3
1SMB90AT3
1SMB100AT3
NV
NX
NZ
85
90
100
55.0
5.0
5.0
94.4
100
111
99.2
105.5
117
104
111
123
1.0
1.0
1.0
137
146
162
4.4
4.1
3.7
1SMB110AT3
1SMB120AT3
1SMB130AT3
1SMB150AT3
PE
PG
PK
PM
110
120
130
150
5.0
5.0
5.0
5.0
122
133
144
167
128.5
140
151.5
176
135
147
159
185
1.0
1.0
1.0
1.0
177
193
209
243
3.4
3.1
2.9
2.5
1SMB160AT3
1SMB170AT3
PP
PR
160
170
5.0
5.0
178
189
187.5
199
197
209
1.0
1.0
259
275
2.3
2.2
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
°
C.
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data - 600 W at the beginning of this group.
* The "G" suffix indicates Pb-Free package available.
1SMB5.0AT3 Series
http://onsemi.com
4
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
t
P
, PULSE WIDTH
1
10
100
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
0.1
Figure 1. Pulse Rating Curve
0
1
2
3
4
0
50
100
t, TIME (ms)
V
ALUE (%)
HALF VALUE - I
PP
2
PEAK VALUE - I
PP
t
r
10 ms
Figure 2. Pulse Waveform
Figure 3. Typical Protection Circuit
V
in
V
L
Z
in
LOAD
Figure 4. Pulse Derating Curve
PEAK PULSE DERA
TING IN % OF
PEAK POWER OR CURRENT
@
T A
= 25
C
°
100
80
60
40
20
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
120
140
160
t
P
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 5. Capacitance versus Breakdown
Voltage
0.1
1
10
100
1000
10
100
1000
10,000
C, CAP
ACIT
ANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ V
RWM
P
PK
, PEAK POWER (kW)
1SMB5.0AT3 Series
http://onsemi.com
5
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 6.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 7. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1.0 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
°
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 8. Average power must be derated as the lead or
ambient temperature rises above 25
°
C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 8 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms pulse. However, when the derating factor for a
given pulse of Figure 8 is multiplied by the peak power
value of Figure 1 for the same pulse, the results follow the
expected trend.
1SMB5.0AT3 Series
http://onsemi.com
6
V
L
V
V
in
V
in
(TRANSIENT)
V
L
t
d
V
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 6.
Figure 7.
Figure 8. Typical Derating Factor for Duty Cycle
DERA
TING F
ACT
OR
1 ms
10
m
s
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100
m
s
0.1 0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
1SMB5.0AT3 Series
http://onsemi.com
7
OUTLINE DIMENSIONS
SMB
CASE 403A-03
ISSUE D
A
S
D
B
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.160
0.180
4.06
4.57
B
0.130
0.150
3.30
3.81
C
0.075
0.095
1.90
2.41
D
0.077
0.083
1.96
2.11
H 0.0020 0.0060
0.051
0.152
J
0.006
0.012
0.15
0.30
K
0.030
0.050
0.76
1.27
P
0.020 REF
0.51 REF
S
0.205
0.220
5.21
5.59
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 8:1
2.743
0.108
2.159
0.085
2.261
0.089
1SMB5.0AT3 Series
http://onsemi.com
8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
1SMB5.0AT3/D
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.