ChipFind - Datasheet

Part Number NTE38

Download:  PDF   ZIP
NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high­
speed switching and linear amplifier applications for high­voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D
Collector­Emitter Sustaining Voltage:
NTE38:
V
CEO(sus)
= 350V @ I
C
= 200mA
NTE175: V
CEO(sus)
= 300V @ I
C
= 200mA
D
Second Breakdown Collector Current:
NTE38
I
S/b
= 875mA @ V
CE
= 40V
NTE175 I
S/b
= 350mA @ V
CE
= 100V
D
Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector­Emitter Voltage, V
CEO
NTE38
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector­Base Voltage, V
CB
NTE38
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter­Base Voltage, V
EB
6Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
35W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
°
C
0.2W/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
­65
°
to +200
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, T
stg
­65
°
to +200
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
JC
5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
Collector­Emitter Sustaining Voltage
NTE38
V
CEO(sus)
I
C
= 200mA, I
B
= 0
350
­
­
V
NTE175
300
­
­
V
Collector­Emitter Sustaining Voltage
NTE38 Only
V
CEX(sus)
I
C
= 200mA, V
BE
= ­1.5V, L = 10mH
400
­
­
V
V
CER(sus)
I
C
= 200mA, I
B
= 0, R
BE
= 50
375
­
­
V
Emitter­Base Breakdown Voltage
NTE38 Only
V
EBO
I
E
= 0.5mA, I
C
= 0
6
­
­
V
Collector Cutoff Current
I
CEO
V
CE
= 150V, I
B
= 0
­
­
5
mA
Collector Cutoff Current
NTE38
I
CEV
V
CE
= 250V, V
BE(off)
= 1.5V
­
­
0.5
mA
V
CE
= 250V, V
BE(off)
= 1.5V, T
C
= +100
°
C
­
­
5.0
mA
V
CE
= 315V, V
BE(off)
= 1.5V
­
­
0.5
mA
V
CE
= 315V, V
BE(off)
= 1.5V, T
C
= +100
°
C
­
­
5.0
mA
V
CE
= 360V, V
BE(off)
= 1.5V
­
­
0.5
mA
V
CE
= 360V, V
BE(off)
= 1.5V, T
C
= +100
°
C
­
­
5.0
mA
NTE175
I
CEX
V
CE
= 450V, V
BE(off)
= 1.5V
­
­
1.0
mA
V
CE
= 300V, V
BE(off)
= 1.5V, T
C
= +150
°
C
­
­
3.0
mA
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
­
­
0.5
mA
ON Characteristics (Note 2)
DC Current Gain
NTE38
h
FE
I
C
= 1A, V
CE
= 4V
10
­
100
NTE175
I
C
= 0.1A, V
CE
= 10V
40
­
­
I
C
= 1A, V
CE
= 2V
8
­
80
I
C
= 1A, V
CE
= 10V
25
­
100
Collector­Emitter Saturation Voltage
NTE38
V
CE(sat)
I
C
= 1A, I
B
= 125mA
­
­
2.0
V
NTE175
­
­
0.75
V
Base­Emitter Saturation Voltage
NTE38
V
BE(sat)
I
C
= 1A, I
B
= 125mA
­
­
1.4
V
NTE175
I
C
= 1A, I
B
= 100mA
­
­
1.4
V
Base­Emitter ON Voltage
NTE175 Only
V
BE(on)
I
C
= 1A, V
CE
= 10V
­
­
1.4
V
Dynamic Characteristics
Current Gain ­Bandwidth Product
NTE38
f
T
I
C
= 200mA, V
CE
= 10V, f
test
= 5MHz,
20
­
­
MHz
NTE175
C
CE
test
Note 3
15
­
­
MHz
Output Capacitance (NTE175 Only)
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
­
­
120
pF
Note 2. Pulse Test: Pulse Width
300
µ
s, Duty Cycle
2%.
Note 3. f
T
= |h
fe
|
f
test
Electrical Characteristics (Cont'd): (T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Second Breakdown
Second Breakdown Collector Current
NTE38
I
S/b
t = 1s (Non­Repetitive), V
CE
= 40V
875
­
­
mA
NTE175
V
CE
= 100V
350
­
­
mA
Switching Characteristics
NTE38
Rise Time
t
r
V
CC
= 200V, I
C
= 1A
­
­
0.6
µ
s
Storage Time
t
s
CC
C
I
B1
= I
B2
= 125mA
­
­
2.5
µ
s
Fall Time
t
f
­
­
0.6
µ
s
NTE175
Rise Time
t
r
V
CC
= 200V,
I
B1
= 100mA, R
L
= 200
­
­
3.0
µ
s
Storage Time
t
s
CC
I
C
= 1A
I
B1
= I
B2
= 100mA
­
­
4.0
µ
s
Fall Time
t
f
­
­
3.0
µ
s
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Base
.580 (14.7)
.200
(5.08)
Emitter
Collector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)