NTE216
Silicon NPN Transistor
High Speed Switch, Core Driver
Absolute Maximum Ratings:
CollectorBase Voltage, V
CBO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
A
= +25
°
C), P
D
1.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Temperature, T
opr
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 60V
1.7
µ
A
DC Current Gain
h
FE
I
C
= 10mA, V
CE
= 1V
30
I
C
= 150mA, V
CE
= 1V
60
150
I
C
= 300mA, V
CE
= 1V
40
I
C
= 500mA, V
CE
= 1V
35
I
C
= 800mA, V
CE
= 2V
20
I
C
= 1A, V
CE
= 5V
25
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10mA
0.25
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10mA
0.76
V
Capacitance
C
ob
10
pF
TurnOff Time
t
off
V
CC
= 30V, I
C
= 500mA,
I
B1
= I
B2
= 50mA
60
ns
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