SILICON TRANSISTOR
FEATURES
PACKAGE DRAWINGS
·
Low Noise, High Gain
(Unit: mm)
·
Operable at Low Voltage
·
Small Feed-back Capacitance
C
re
= 0.4 pF TYP.
·
Built-in 2 Transistors (2
×
2SC4959)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µ
PA806T
Loose products
Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS)
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µ
PA806T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
150 in 1 element
mW
200 in 2 elements
Note
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
65 to +150
°C
Note
110 mW must not be exceeded in 1 element.
µ
PA806T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
©
1995
PRELIMINARY DATA SHEET
Printed in Japan
Document No. ID-3640
(O.D. No. ID-9147)
Date Published April 1995 P
The information in this document is subject to change without notice.
2.1±0.1
1.25±0.1
1
2
3
6
5
4
0.2
0
+0.1
0.65
0.65
1.3
2.0±0.2
0.9±0.1
0.7
0~0.1
0.15
0
+0.1
6
5
4
Q
1
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
XY
µ
PA806T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
µ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
µ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
12
GHz
Feed-back Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion Power Gain
|S
21
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
1.5
2.5
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 3 V, I
C
= 10 mA
0.85
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
350
µ
s, Duty cycle
2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
KB
Marking
T83
h
FE
Value
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
50
100
150
100
0
Total Power Dissipation P
T
(mW)
Ambient Temperature T
A
(°C)
200
Free Air
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
0
10
0.5
1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
30
40
50
V
CE
= 3 V
2 Elements in Total
Per Element
µ
PA806T
3
0.5
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
2
1
2
5
10
20
50
1
Insertion Power Gain l S
21e
l
2
(dB)
Collector Current I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
2
4
6
8
10
2
5
10
20
50
0
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
40
60
DC Current Gain h
FE
Collector Current I
C
(mA)
100
200
0
0.1
I
B
= 100
µ
A
200
µ
A
300
µ
A
400
µ
A
500
µ
A
0.2
0.5
1
2
5 V
V
CE
= 3 V
5
10
20
50 100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
30
50
10
14
12
10
8
6
4
5 V
3 V
f = 2 GHz
0.5
Collector Current I
C
(mA)
0
1
2
3
0.5
Feed-back Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.2
1
5
10
20
Noise Figure NF (dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
1
2
5
20
50
4
f = 1 MHz
0.3
0.4
0.5
0.6
2
10
f = 2 GHz
V
CE
= 3 V
V
CE
= 1 V
3 V
5 V
V
CE
= 1 V
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