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MOS FIELD EFFECT TRANSISTOR
µ
µ
µ
µ
PA1808
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16250EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2002
DESCRIPTION
The
µ
PA1808 is a switching device, which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as DC/DC converters and power
management of notebook computers and so on.
FEATURES
·
4.0 V drive available
·
Low on-state resistance
R
DS(on)1
= 17 m
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
R
DS(on)2
= 23 m
MAX. (V
GS
= 4.5 V, I
D
= 5.0 A)
R
DS(on)3
= 26 m
MAX. (V
GS
= 4.0 V, I
D
= 5.0 A)
·
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ
PA1808GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
20
V
Drain Current (DC) (T
A
= 25°C)
I
D(DC)
±
9.5
A
Drain Current (pulse)
Note1
I
D(pulse)
±
38
A
Total Power Dissipation
Note2
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
-
55 to +150
°C
Notes 1. PW
10
µ
s, Duty Cycle
1%
2. Mounted on ceramic substrate of 5000 mm
2
x 1.1 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1
4
8
5
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.145
±0.055
0.1
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8: Drain
0.8 MAX.
3.15 ±0.15
3.0 ±0.1
0.65
0.10 M
0.27
+0.03
0.08
0.25
0.5
3
°
+5
°
3
°
0.6
+0.15
0.1
1.2 MAX.
0.1 ±0.05
1.0 ±0.05
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet G16250EJ1V0DS
2
µ
µ
µ
µ
PA1808
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1.0
µ
A
Gate Leakage Current
I
GSS
V
GS
=
±
18 V, V
DS
= 0 V
±
10
µ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
1.5
1.9
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 5.0 A
5.0
10.5
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 5.0 A
13.5
17
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 5.0 A
17
23
m
R
DS(on)3
V
GS
= 4.0 V, I
D
= 5.0 A
19
26
m
Input Capacitance
C
iss
V
DS
= 10 V
660
pF
Output Capacitance
C
oss
V
GS
= 0 V
280
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
100
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 5.0 A
13.5
ns
Rise Time
t
r
V
GS
= 10 V
5.6
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
38
ns
Fall Time
t
f
7.9
ns
Total Gate Charge
Q
G
V
DD
= 24 V
13
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
1.8
nC
Gate to Drain Charge
Q
GD
I
D
= 9.5 A
3.7
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 9.5 A, V
GS
= 0 V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 9.5 A, V
GS
= 0 V
27
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
µ
s
19
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
µ
Duty Cycle
1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
I
D
0
t
on
t
off
Data Sheet G16250EJ1V0DS
3
µ
µ
µ
µ
PA1808
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - P
e
rc
ent
age of
Rat
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
T
- T
o
t
a
l
P
o
w
e
r Di
s
s
i
p
at
i
on - W
0
0.5
1
1.5
2
2.5
0
25
50
75
100
125
150
175
Mounted on ceramic
substrate of 5000 mm
2
x 1.1 mm
Mounted on FR-4 board
of 2500 mm
2
x 1.6 mm
T
A
- Ambient Temperature -
°
C
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
- A
0.01
0.1
1
10
100
0.1
1
10
100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 m s
DC
Single pulse
Mounted on ceram ic substrate
of 5000 m m
2
x 1.1 m m
R
DS(on)
Lim ited
(V
GS
= 10 V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
c
h
-
A
)
- Trans
i
ent
Therm
a
l
Res
i
s
t
anc
e -
°
C/
W
1
10
100
1000
Single pulse
Mounted on ceramic
substrate of 5000 mm
2
x 1.1 mm
62.5
°
C/W
Mounted on FR-4 board of
2500 mm
2
x 1.6 mm
125
°
C/W
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet G16250EJ1V0DS
4
µ
µ
µ
µ
PA1808
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
- A
0
10
20
30
40
0
0.4
0.8
1.2
1.6
2
Pulsed
4.0 V
V
GS
= 10 V
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
- A
0.0001
0.001
0.01
0.1
1
10
100
1
1.5
2
2.5
3
3.5
4
V
D S
= 10 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
-
25
°
C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(
o
ff)
- Gat
e
Cut
-
of
f
V
o
l
t
age - V
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
| y
fs
| - Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e - S
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
= 10 V
Pulsed
T
A
=
-
25
°
C
25
°
C
75
°
C
125
°
C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
-50
0
50
100
150
I
D
= 5.0 A
Pulsed
10 V
4.5 V
V
GS
= 4.0 V
0
1 0
2 0
3 0
4 0
0
2
4
6
8
1 0
I
D
= 5.0 A
P u ls e d
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
T
ch
- Channel Temperature -
°
C
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
V
GS
- Gate to Source Voltage - V
Data Sheet G16250EJ1V0DS
5
µ
µ
µ
µ
PA1808
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
1 0
2 0
3 0
4 0
0 .0 1
0 .1
1
1 0
1 0 0
P u ls e d
V
G S
= 4 .0 V
4 .5 V
1 0 V
1 0
1 0 0
1 0 0 0
0 .1
1
1 0
1 0 0
V
G S
= 0 V
f = 1 .0 M H z
C
is s
C
o s s
C
rs s
R
DS
(
on)
- Drai
n t
o
S
ourc
e
On-s
t
a
t
e
Res
i
s
t
anc
e - m
I
D
- Drain Current - A
C
is
s
, C
os
s
, C
rs
s
- Capac
i
t
anc
e - pF
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
t
d(
on)
, t
r
, t
d(
of
f
)
, t
f
- S
w
i
t
c
h
i
ng Ti
m
e
- ns
1
10
100
1000
10000
0.01
0.1
1
10
100
V
D D
= 15 V
V
G S
= 10 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
I
F
- Di
ode Forw
ard Current
- A
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gat
e
t
o
S
ourc
e
V
o
l
t
age - V
0
2
4
6
8
10
0
5
10
15
I
D
= 9.5 A
V
DD
= 24 V
15 V
6.0 V
Q
G
- Gate Charge - nC
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