©
1996
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32500, NE27200
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs
and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
for commercial systems, industrial and space applications.
FEATURES
·
Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., G
a
= 12.5 dB TYP. at f = 12 GHz
·
Gate Length : L
g
= 0.2
µ
m
·
Gate Width : W
g
= 200
µ
m
ORDERING INFORMATION
PART NUMBER
QUALITY GRADE
NE32500
Standard (Grade D)
NE27200
Special, specific (Grade C and B)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
3.0
V
Drain Current
I
D
I
DSS
mA
Total Power Dissipation
P
tot
*
200
mW
Channel Temperature
T
ch
175
°
C
Storage Temperature
T
stg
65 to +175
°
C
* Chip mounted on a Alumina heatsink (size: 3
×
3
×
0.6
t
)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
0.5
10
µ
A
V
GS
= 3 V
Saturated Drain Current
I
DSS
20
60
90
mA
V
DS
= 2 V, V
GS
= 0 V
Gate to Source Cutoff Voltage
V
GS(off)
0.2
0.7
2.0
V
V
DS
= 2 V, I
D
= 100
µ
A
Transconductance
g
m
45
60
mS
V
DS
= 2 V, I
D
= 10 mA
Thermal Resistance
R
th
*
260
°C/W
channel to case
Noise Figure
NF
0.45
0.55
dB
V
DS
= 2 V, I
D
= 10 mA, f = 12 GHz
Associated Gain
G
a
11.0
12.5
dB
RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
Document No. P11512EJ2V0DS00 (2nd edition)
Date Published January 1997 N
Printed in Japan
NE32500, NE27200
2
CHIP DIMENSIONS (Unit:
µ
m)
58
36.5
66
25
38
5.5
13
25
49.5
43
66
13
350
25
89
13
25
21
76.5
100.5
350
68
60
46.5
Drain
Source
Source
Gate
Thickness = 140 m
µ
: BONDING AREA
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
0
50
1.5
3.0
100
150
200
250
T
A
Ambient Temperature °C
V
DS
Drain to Source Voltage V
250
100
80
60
40
20
200
150
100
50
P
tot
Total Power Dissipation mW
I
D
Drain Current mA
V
GS
= 0 V
0.2 V
0.4 V
0.6 V
0.8 V
NE32500, NE27200
3
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1.0
2.0
0
V
GS
Gate to Source Voltage V
V
DS
= 2 V
60
40
20
0
I
D
Drain Current mA
Gain Calculations
MSG.
=
|
|
|
|
S
S
21
12
K
1 |
|
| S
|
| S
|
2 | S
|| S
|
2
11
2
22
2
12
21
=
+
-
-
MAG.
| S
|
| S
|
(K
K
1)
21
12
2
=
±
-
=
-
S
S
S
S
11
22
21
12
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
1
2
4
6
8 10 14
20
30
10
0
20
NF
G
a
30
f Frequency GHz
I
D
Drain Current mA
V
DS
= 2 V
I
D
= 10 mA
V
DS
= 2 V
f = 12 GHz
24
20
14
13
12
11
10
16
12
8
4
1.0
2.0
1.5
1.0
0.5
0.5
0
NF Noise Figure dB
NF Noise Figure dB
G
a
Associated Gain dB
G
a
Associated Gain dB
G
a
NF
NE32500, NE27200
4
S-PARAMETERS MAG. AND ANG.
V
DS
= 2 V, I
D
= 10 mA
FREQUENCY
S
11
S
21
S
12
S
22
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
(MHz)
(deg.)
(deg.)
(deg.)
(deg.)
500
0.999
4
4.34
177
0.006
82
0.564
3
1000
0.998
7
4.33
174
0.012
84
0.562
6
2000
0.996
14
4.28
168
0.025
81
0.559
11
3000
0.992
20
4.26
163
0.037
76
0.557
17
4000
0.976
28
4.24
158
0.048
71
0.551
23
5000
0.962
36
4.11
152
0.060
66
0.546
29
6000
0.962
42
4.06
148
0.070
62
0.539
34
7000
0.943
48
3.95
143
0.079
58
0.533
40
8000
0.928
55
3.83
139
0.087
55
0.526
44
9000
0.920
60
3.73
134
0.095
51
0.519
49
10000
0.900
67
3.58
129
0.104
47
0.508
54
11000
0.881
72
3.46
126
0.109
43
0.503
58
12000
0.869
77
3.34
122
0.114
40
0.494
62
13000
0.856
82
3.23
118
0.120
37
0.488
66
14000
0.839
86
3.11
115
0.123
34
0.483
69
15000
0.831
91
3.01
112
0.127
32
0.476
72
16000
0.818
96
2.88
108
0.131
29
0.472
76
17000
0.804
99
2.78
105
0.134
27
0.468
79
18000
0.796
103
2.68
103
0.137
24
0.464
81
19000
0.784
106
2.59
100
0.141
22
0.460
84
20000
0.782
111
2.49
96
0.142
20
0.456
88
21000
0.772
114
2.42
95
0.144
19
0.457
90
22000
0.761
117
2.33
93
0.147
17
0.450
92
23000
0.758
119
2.25
90
0.147
15
0.454
94
24000
0.753
122
2.20
88
0.148
14
0.453
95
25000
0.748
125
2.11
86
0.150
12
0.453
98
26000
0.746
127
2.06
84
0.152
11
0.460
100
27000
0.750
129
2.01
82
0.154
9
0.453
101
28000
0.738
133
1.93
79
0.151
7
0.453
104
29000
0.744
135
1.90
77
0.153
7
0.453
105
30000
0.742
138
1.84
75
0.156
4
0.454
107
NE32500, NE27200
5
CHIP HANDLING
DIE ATTACHMENT
Die attach operation can be accomplished with Au-Sn (within a 300 °C 10 s) performs in a forming gas
environment.
Epoxy die attach is not recommend.
BONDING
Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
kept to minimum.
As a general rule, the bonding operation should be kept within a 280 °C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only
and does not preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky
barrier gate.
CAUTION
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
NE32500, NE27200
6
[MEMO]
NE32500, NE27200
7
[MEMO]
NE32500, NE27200
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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