ChipFind - Datasheet

Part Number 325S01

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NONLINEAR MODEL
NE325S01
California Eastern Laboratories
Parameters
Q1
Parameters
Q1
VTO
-0.8
RG
3
VTOSC
0
RD
2
ALPHA
8
RS
2
BETA
0.103
RGMET
0
GAMMA
0.092
KF
0
GAMMADC
0.08
AF
1
Q
2
TNOM
27
DELTA
1
XTI
3
VBI
0.715
EG
1.43
IS
3e-13
VTOTC
0
N
1.22
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
4e-12
CDS
0.13e-12
RDB
5000
CBS
1e-9
CGSO
0.3e-12
CGDO
0.02e-12
DELTA1
0.3
DELTA2
0.1
FC
0.5
VBR
Infinity
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
FET NONLINEAR MODEL PARAMETERS
(1)
UNITS
MODEL RANGE
Frequency:
0.1 to 18 GHz
Bias:
V
DS
= 1 V to 3 V, I
D
= 5 mA to 30 mA
I
DSS
= 59.9 ma @ V
GS
= 0, V
DS
= 2 V
Date:
2/98
SCHEMATIC
(1) Series IV Libra TOM Model
CGD_PKG
0.001pF
Rsx
0.06 ohms
Lgx
CDS_PKG
0.05PF
CGS_PKG
0.07pF
Rdx
6 ohms
Lsx
0.07nH
SOURCE
DRAIN
Rgx
6 ohms
GATE
0.69nH
Ldx
0.6nH
Q1
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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PRINTED IN USA ON RECYCLED PAPER -10/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE