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Part Number 2SK4035

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MOS FIELD EFFECT TRANSISTOR
2SK4035
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
Document No. D17447EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005

DESCRIPTION
2SK4035 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage. It excels in the switching characteristics in low on-state
resistance and because it is the small size surface mounting
externals, is the best for the high-speed switching usage of the
equipment that promotes the automation of space-saving and
mounting.
FEATURES
· Low input capacitance
C
iss
= 74 pF TYP.
· Low on-state resistance
R
DS(on)
= 4.5
MAX. (V
GS
= 10 V, I
D
= 0.25 A)
· Small and surface mount package (SC-96)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4035
SC-96 (Mini Mold Thin Type)
2SK4035-A
Note
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in external
electrode and other parts.)

Marking: XP
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
250 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±30 V
Drain Current (DC) (T
A
= 25°C)
I
D(DC)
±0.5 A
Drain Current (pulse)
Note1
I
D(pulse)
±2.0 A
Total Power Dissipation (T
A
= 25°C)
P
T1
0.2 W
Total Power Dissipation (T
A
= 25°C)
Note2
P
T2
1.25 W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
-55 to +150
°C

Notes 1. PW
10
µ
s, Duty Cycle
1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t
5 sec

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
­0.06
0.4
+0.1
­0.05
2.8 ±0.2
1.5
0.95
1.9
2.9 ±0.2
0.95
0.65
+0.1 ­0.15
1. Gate
2. Source
3. Drain
2
1
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Data Sheet D17447EJ1V0DS
2
2SK4035
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 250 V, V
GS
= 0 V
10
µ
A
Gate Leakage Current
I
GSS
V
GS
=
±30 V, V
DS
= 0 V
±10
µ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
2.5
3.5
4.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 0.25 A
0.2
0.5
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 0.25 A
3.2
4.5
Input Capacitance
C
iss
V
DS
= 10 V
74
pF
Output Capacitance
C
oss
V
GS
= 0 V
16
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
7
pF
Turn-on Delay Time
t
d(on)
V
DD
= 125 V, I
D
= 0.25 A
7
ns
Rise Time
t
r
V
GS
= 10 V
5
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
12 ns
Fall Time
t
f
40 ns
Total Gate Charge
Q
G
V
DD
= 200 V
4
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
0.9
nC
Gate to Drain Charge
Q
GD
I
D
= 0.5 A
2
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 0.5 A, V
GS
= 0 V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 0.5 A, V
GS
= 0 V
42
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
µ
s
57 nC
Note Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
µ
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D17447EJ1V0DS
3
2SK4035
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
dT - Pe
rcentage
of Rated Powe
r -
%
0
20
40
60
80
100
120
0
25
50
75
100 125
150 175
T
A
- Ambient Temperature -
°C
P
T
- Total Powe
r
Dissipation - W
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm,
t
5 sec
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Dr
ain Cur
r
ent
- A
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
1000
I
D(pulse)
I
D(DC)
Single pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm
R
D
S(
on
)
Li
m
ite
d
(a
t V
G
S
=
10
V
)
Po
we
r D
iss
ipa
tio
n L
im
ite
d (
5s
)
10
m
s
PW
=
1
m
s
10
0 m
s
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(c
h-A)
-
Transient
Thermal Resista
n
ce -
°
C/W
0.1
1
10
100
1000
Without board
Single pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
Data Sheet D17447EJ1V0DS
4
2SK4035

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Dr
ain Cur
r
ent
- A
0
1
2
0
2
4
6
8
10
V
GS
= 10 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Dr
ain Cur
r
ent
- A
0.00001
0.0001
0.001
0.01
0.1
1
10
0
5
10
15
T
A
=
-55°C
-25°C
25°C
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate C
u
t
-
off Voltage - V
0
1
2
3
4
5
6
7
-75
-25
25
75
125
175
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°C
|
y
fs
| - Forward
T
r
ansfer Admittan
c
e - S
0.01
0.1
1
10
0.01
0.1
1
10
75°C
125°C
150°C
V
DS
= 10 V
Pulsed
T
A
=
-55°C
-25°C
25°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)

- Drain to S
ource On
-state Re
sistance -
0
1
2
3
4
5
6
7
8
0.01
0.1
1
10
V
GS
= 10 V
Pulsed
I
D
- Drain Current - A
R
DS(
on)

- Drain to S
ource On
-state Re
sistance -
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
I
D
= 0.25 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D17447EJ1V0DS
5
2SK4035
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)

- Drain to S
ource On
-state Re
sistance -
0
1
2
3
4
5
6
7
8
-75
-25
25
75
125
175
V
GS
= 10 V
I
D
= 0.25 A
Pulsed
T
ch
- Channel Temperature - °C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
1
10
100
1000
0.01
0.1
1
10
100
1000
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING
CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
c
h
i
ng Ti
me - ns
1
10
100
0.1
1
10
V
GS
= 10 V
V
DD
= 125 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
V
DS
- D
r
ain to So
urce Voltage - V
0
50
100
150
200
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
V
DD
= 200 V
125 V
50 V
I
D
= 0.5 A
V
GS
Q
G
- Gate Charge - nC
V
GS
-
Gate to So
urce Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Fo
rwa
r
d
Curren
t
- A
0.01
0.1
1
10
0
0.5
1
1.5
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
di/dt = 100 A/
µs
V
GS
= 0 V
I
F
- Diode Forward Current - A
2SK4035







The information in this document is current as of July, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1