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Part Number 2SK3642

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MOS FIELD EFFECT TRANSISTOR
2SK3642
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15970EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3642-ZK TO-252
(MP-3ZK)

DESCRIPTION
The 2SK3642 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
· Low on-state resistance
R
DS(on)1
= 9.5 m
MAX. (V
GS
= 10 V, I
D
= 32 A)
R
DS(on)2
= 16 m
MAX. (V
GS
= 4.5 V, I
D
= 18 A)
· Low C
iss
: C
iss
= 1100 pF TYP.
· Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30 V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20 V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
±64 A
Drain Current (pulse)
Note1
I
D(pulse)
±190 A
Total Power Dissipation (T
C
= 25°C)
P
T1
36 W
Total Power Dissipation
P
T2
1.0 W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
­55 to + 150
°C
Single Avalanche Current
Note2
I
AS
25 A
Single Avalanche Energy
Note2
E
AS
62
mJ

Notes 1. PW
10
µ
s, Duty Cycle
1%
2. Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, L = 100
µ
H, V
GS
= 20
0 V






(TO-252)
Data Sheet D15970EJ4V0DS
2
2SK3642
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
µ
A
Gate Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
µ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
Note
|
y
fs
|
V
DS
= 10 V, I
D
= 32 A
13
26
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 32 A
7.6
9.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 18 A
10.8
16
m
Input Capacitance
C
iss
1100
pF
Output Capacitance
C
oss
410
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
150
pF
Turn-on Delay Time
t
d(on)
9.6
ns
Rise Time
t
r
5.1
ns
Turn-off Delay Time
t
d(off)
38
ns
Fall Time
t
f
V
DD
= 15 V, I
D
= 32 A
V
GS
= 10 V
R
G
= 10
10
ns
Total Gate Charge
Q
G
23
nC
Gate to Source Charge
Q
GS
4.3
nC
Gate to Drain Charge
Q
GD
V
DD
= 24 V
V
GS
= 10 V
I
D
= 64 A
6 nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 64 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 64 A, V
GS
= 0 V
31
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
µ
s
25
nC
Note Pulsed: PW
350
µ
s, Duty Cycle
2%
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
= 1 s
Duty Cycle
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
µ
Data Sheet D15970EJ4V0DS
3
2SK3642
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
P
T
- Total Power Dissipation - W
0
10
20
30
40
50
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
T
C
= 25
°C
Single pulse
10 m s
Power Dissipation Lim ited
I
D(DC)
PW = 100
µs
10
µs
1 m s
DC
R
DS (on)
Lim ited
(at V
G S
= 10 V)
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°
C/W
0.01
0.1
1
10
100
1000
Single pulse
R
th(ch-A)
= 125
°C/W
R
th(ch-C)
= 3.47
°C/W
PW - Pulse Width - s
10
µ 100
µ
1 m
10 m
100 m
1
10
100
1000
Data Sheet D15970EJ4V0DS
4
2SK3642

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0
50
100
150
200
250
0
1
2
3
V
GS
= 10 V
Pulsed
4.5 V
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
T
ch
=
-55°C
25
°C
75
°C
150
°C
V
DS
= 10 V
Pulsed
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
- Gate Cut-off Voltage - V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°C
|
y
fs
| - Forward Transfer Admittance - S
0.1
1
10
100
0.1
1
10
100
T
ch
=
-55°C
25
°C
75
°C
150
°C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
25
30
1
10
100
1000
V
GS
= 4.5 V
Pulsed
10V
I
D
- Drain Current - A
R
DS(
on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
25
30
0
5
10
15
20
I
D
= 32 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D15970EJ4V0DS
5
2SK3642
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
- Drain to Source On-state Resistance - m
0
5
10
15
20
25
-50
0
50
100
150
I
D
= 32 A
Pulsed
10 V
V
GS
= 4.5 V
T
ch
- Channel Temperature - °C
C
is
s
, C
os
s
, C
rss
- Capacitance - pF
10
100
1000
10000
0.01
0.1
1
10
100
V
G S
= 0 V
f = 1 M H z
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
, t
r
, t
d(
off)
, t
f
- Swi
t
c
h
i
ng Ti
me - ns
1
10
100
1000
0.1
1
10
100
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
DS
- Drain to Source Voltage - V
0
5
10
15
20
25
30
0
5
10
15
20
25
0
2
4
6
8
10
12
V
DS
V
DD
= 24 V
15 V
I
D
= 64 A
V
GS
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Forward Current - A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
rs
e Rec
o
v
e
ry
Ti
me - ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
µs
V
GS
= 0 V
I
F
- Diode Forward Current - A
Data Sheet D15970EJ4V0DS
6
2SK3642

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
- Single Avalanche Current - A
0.1
1
10
100
0.01
0.1
1
10
E
AS
= 62 m J
I
AS
= 25 A
V
DD
= 15 V
V
GS
= 20
0 V
R
G
= 25
Starting T
ch
= 25
°C
L - Inductive Load - mH
Energy Derating Factor - %
0
20
40
60
80
100
120
25
50
75
100
125
150
V
DD
= 15 V
V
GS
= 20
0 V
R
G
= 25
I
AS
25 A
Starting T
ch
- Starting Channel Temperature - °C
Data Sheet D15970EJ4V0DS
7
2SK3642
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
±0.2
2.3
±0.1
0.5
±0.1
0.76
±0.12
0 to 0.25
0.5
±0.1
1.0
No Plating
No Plating
5.1 TYP.
1.0 TYP.
6.1
±
0.2
0.51 MIN.
4.0 MIN
.
0.8
10.4 MAX. (9.8 TYP.)
4.3 MIN.
1
4
2
3
1.14 MAX.
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)

EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
2SK3642









The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1