Document Outline
- COVER
- DESCRIPTION
- FEATURES
- PACKAGE DIMENSIONS
- ABSOLUTE MAXIMUM RATINGS (TA = 25 degree)
- ELECTRICAL CHARACTERISTICS (TA = 25 degree)
- REFERENCE
©
1994
DATA SHEET
The information in this document is subject to change without notice.
MOS Field Effect Power Transistors
2SK2723
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching spplications.
FEATURES
·
Low On-Resistance
R
DS (on) 1
= 40m
Max. (V
GS
= 10 V, I
D
= 13 A)
R
DS (on) 2
= 60m
Max. (V
GS
= 4 V, I
D
= 13 A)
·
Low C
iss
C
iss
= 830 pF Typ.
·
Built-in G-S Protection Diode
·
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
±
20
V
Drain Current (DC)
I
D (DC)
±
25
A
Drain Current (pulse)*
I
D (pulse)
±
100
A
Total Power Dissipation (T
A
= 25
°
C)
P
T
2.0
W
Total Power Dissipation (T
c
= 25
°
C)
P
T
25
W
Channel Temperature
T
ch
150
°
C
Storage Temperature
T
stg
-
55 to +150
°
C
*PW
10
µ
s, Duty Cycle
1%
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage
may be applied to this device.
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
10.0
±
0.3
PACKAGE DIMENSIONS
(in millimeter)
MP-45F (ISOLATED TO-220)
4.5
±
0.2
2.7
±
0.2
2.5
±
0.1
1.3
±
0.2
4
±
0.2
13.5MIN.
12.0
±
0.2
15.0
±
0.3
3
±
0.1
0.7
±
0.1
1.5
±
0.2
2.54
1.Gate
2.Drain
3.Source
2.54
1
2
3
0.65
±
0.1
3.2
±
0.2
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10623EJ2V0DS00 (2nd edition)
Date Published April 1996 P
Printed in Japan
2
2SK2723
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source
R
DS (on) 1
V
GS
= 10 V, I
D
= 13 A
28
40
m
On-state Resistance
R
DS (on) 2
V
GS
= 4 V, I
D
= 13 A
45
60
m
Gate to Source Cutoff Voltage
V
GS (off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
y
fs
V
DS
= 10 V, I
D
= 13 A
8.0
18
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0
10
µ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
10
µ
A
Input Capacitance
C
iss
V
DS
= 10 V
830
pF
Output Capacitance
C
oss
V
GS
= 0
430
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
185
pF
Turn-On Delay Time
t
d (on)
I
D
= 13 A
21
ns
Rise Time
t
r
V
GS (on)
= 10 V
185
ns
Turn-Off Delay Time
t
d (off)
V
DD
= 30 V
100
ns
Fall Time
t
f
R
G
= 10
110
ns
Total Gate Charge
Q
G
I
D
= 25 A
35
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
2.8
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
15
nC
Body Diode Forward Voltage
V
F (S-D)
I
F
= 25 A, V
GS
= 0
1.0
V
Reverse Recovery Time
t
r r
I
F
= 25 A, V
GS
= 0
60
ns
Reverse Recovery Charge
Q
r r
di/dt = 100 A/
µ
s
125
nC
t = 1 s
Duty Cycle
1 %
V
GS
0
R
G
V
DD
R
L
R
G
= 10
V
GS
Wave Form
V
GS (on)
I
D
t
d (on)
t
on
t
off
t
r
t
d (on)
t
r
0
10 %
0
10 %
10 %
90 %
90 %
90 %
I
D
Wave Form
PG.
D.U.T
V
DD
R
L
50
PG.
D.U.T
t
µ
I
G
= 2 mA
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
V
GS
I
D
3
2SK2723
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
V
GS-
Gate to Source Voltage - V
I
D
- Drain Current - A
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
°
C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
°
C
P
T
- Total Power Dissipation - W
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
35
30
25
20
15
10
5
0.1
0.1
1
10
100
1
10
100
T
C
= 25
°
C
Single Pulse
0
4
6
8
20
10
100
1000
Pulsed
100
2
0
Pulsed
5
6
8
V
GS
=20V
V
GS
=4V
V
GS
=10V
T
ch
=-25
°
C
25
°
C
75
°
C
125
°
C
1
2
3
4
7
I
D(pulse)
I
D(DC)
DC
10ms
R
DS(on)
Lmited
1ms
PW=100 s
µ
80
60
40
V
DS
=10V
4
2SK2723
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance -
°
C/
W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
y
fs
- Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - m
0
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
°
C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - m
20
1
10
0.001
0.01
0.1
1
100
1 000
1m
10m
100m
1
10
100
1 000
10
µ
µ
100
V
DS
=10V
Pulsed
1
10
10
100
1000
100
1 000
20
20
30
Pulsed
40
10
100
Pulsed
0
1.0
V
DS
= 10 V
I
D
= 1 mA
- 50
0
50
100
150
0
1
Single Pulse
40
2.0
60
60
V
GS
=4V
V
GS
=10V
T
ch
=-25
°
C
25
°
C
75
°
C
125
°
C
R
th(ch-c)
=5.0
°
C/W
R
th(ch-a)
=62.5
°
C/W
ID=13A
80
1.5
0.5
5
2SK2723
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
°
C
R
DS(on)
- Drain to Source On-State Resistance - m
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
0
- 50
0
50
100
150
I
D
= 13A
0.1
0
1
10
100
0.5
Pulsed
10
0.1
100
1 000
10 000
1
10
100
V
GS
= 0
f = 1 MHz
10
100
1 000
1
10
100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DIODE CURRENT
I
F
- Dionde Current - A
t
rr
- Reverse Recovery Time - ns
di/dt =100A/ s
V
GS
= 0
1
0.1
10
100
1
10
100
1.0
1.5
V
DD
=30V
V
GS
=10V
R
G
=10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G -
Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0
10
20
30
20
40
60
80
2
4
6
8
10
12
14
16
0
20
40
60
80
V
GS
=4V
V
GS
=10V
C
iss
C
oss
C
rss
V
DD
=12V
30V
48V
V
GS
t
d(off)
t
f
t
d(on)
V
DS
t
r
V
GS
=0
40
V
GS
=10V
1 000
I
D
= 25A
µ
6
2SK2723
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
C10535E
Semiconductor device package manual.
C10943X
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
X10679E
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
7
2SK2723
[MEMO]
2SK2723
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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