©
1995
DATA SHEET
SILICON TRANSISTOR
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
·
P
1
= 27 dBm TYP.
@f = 1.9 GHz, V
CC
= 3.6 V, I
Cq
= 1 mA (Class AB), Duty = 1/8
·
4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5289-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
9.0
V
Collector to Emitter Voltage
V
CEO
6.0
V
Emitter to Base Voltage
V
EBO
2.0
V
Collector Current
I
C
300
mA
Total Power Dissipation
P
T
200 (CW)
mW
1.2 (duty = 1/8)
Note
W
3.0 (duty = 1/24)
Note
W
Junction Temperature
T
j
150
° C
Storage Temperature
T
stg
65 to +150
° C
Note Pulse period is 10 msec or less.
2SC5289
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
PACKAGE DRAWING
(Unit: mm)
Document No. P10250EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
(1.9)
(1.8)
0.85
0.95
0.4
+0.1
0.05
2.8
+0.2
0.3
1.5
+0.2
0.1
2
3
1
4
2.9±0.2
0.4
+0.1
0.05
0.4
+0.1
0.05
T-90
0.6
+0.1
0.05
1.1
+0.2
0.1
0.8
0.16
+0.1
0.06
0 to 0.1
5°
5°
5°
5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
2SC5289
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
5
µ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
5
µ
A
DC Current Gain
h
FE
V
CE
= 3.6 V, I
C
= 200 mA
60
Output Power
P
1
V
CC
= 3.6 V, f = 1.9 GHz,
26.3
27.0
dBm
Power Gain
G
P
I
Cq
= 1 mA (class AB operation)
5.0
6.0
dB
Collector Efficiency
C
Duty factor 1/8
60
70
%
h
FE
Classification
Rank
FB
Marking
T90
h
FE
more than 60
APPLICATION EXAMPLES
(1) Power amplifier for DECT
+3 dBm
P
O
= 27 dBm
2SC5289
2SC5288
2SC5192
(2) Power amplifier for PHS
+7 dBm
P
L
= 23 dBm
2SC5289
2SC5288
2SC5289
3
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
V
CE
= 3.6 V
500
400
300
200
100
0
0.5
1.0
1.5
V
BE
- Base to Emitter Voltage - V
I
C
- Collector Current - mA
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
500
400
300
200
100
0
1
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
2
3
4
I
B
= 5.0 mA
4.0 mA
3.0 mA
2.0 mA
1.0 mA
500 A
µ
5.5 mA
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